Reversible control of Co magnetism by voltage-induced oxidation

Chong Bi, Yaohua Liu, T. Newhouse-Illige, M. Xu, M. Rosales, J. W. Freeland, Oleg Mryasov, Shufeng Zhang, S. G.E. Te Velthuis, W. G. Wang

Research output: Contribution to journalArticle

153 Scopus citations

Abstract

We demonstrate that magnetic properties of ultrathin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy or to an oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. Consequently, an unprecedentedly large change of magnetic anisotropy energy up to 0.73 erg/cm2 has been realized in a nonvolatile manner using gate voltages of only a few volts. These results open a new route to achieve ultralow energy magnetization manipulation in spintronic devices.

Original languageEnglish (US)
Article number267202
JournalPhysical review letters
Volume113
Issue number26
DOIs
StatePublished - Dec 30 2014

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Reversible control of Co magnetism by voltage-induced oxidation'. Together they form a unique fingerprint.

  • Cite this

    Bi, C., Liu, Y., Newhouse-Illige, T., Xu, M., Rosales, M., Freeland, J. W., Mryasov, O., Zhang, S., Te Velthuis, S. G. E., & Wang, W. G. (2014). Reversible control of Co magnetism by voltage-induced oxidation. Physical review letters, 113(26), [267202]. https://doi.org/10.1103/PhysRevLett.113.267202