RF-sputtered Ge-ITO nanocomposite thin films for photovoltaic applications

G. H. Shih, C. G. Allen, Barrett G Potter

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Nanocomposite thin films, composed of a germanium nanocrystalline phase embedded within a tin-doped indium oxide (ITO) matrix, were produced using a multisource, sequential, RF-magnetron sputter deposition technique. The influence of nanocomposite structure on the resulting optical absorption and carrier transport properties was investigated in the context of the use of such materials as functional elements in thin film photovoltaic architectures. Deposition controls and post-deposition thermal anneals were successful in modifying the phase assembly of the nanocomposites, enabling the manipulation of Ge volume fraction, nanocrystallite size and morphology, and spatial distribution within the ITO embedding phase. Modifications in semiconductor nanostructure were correlated with changes in nanocomposite spectral absorption that were consistent with quantum-size-induced variation in Ge absorption onset energy, despite the close agreement in electron affinity between the Ge and ITO components. This suggests the formation of a high band-gap (low electron affinity) interfacial phase between the Ge and ITO components of the nanocomposite. Increased free-carrier (n-type) densities and spectrally resolved photoconductivity were also associated with the presence of the Ge phase. These results emphasize the impact of local and extended length scale structure on properties of importance to photovoltaic performance in semiconductor-based nanocomposites and the utility of the sequential sputter deposition method as a means to manipulate nanocomposite structure.

Original languageEnglish (US)
Pages (from-to)797-802
Number of pages6
JournalSolar Energy Materials and Solar Cells
Volume94
Issue number5
DOIs
StatePublished - May 2010

Fingerprint

Nanocomposite films
Nanocomposites
Thin films
Electron affinity
Sputter deposition
Semiconductor materials
Germanium
Carrier transport
Tin
Photoconductivity
Transport properties
Indium
Light absorption
Spatial distribution
Nanostructures
Volume fraction
Energy gap
Oxides

Keywords

  • Ge
  • ITO
  • Nanocomposite
  • Photovoltaic
  • Thin films

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

RF-sputtered Ge-ITO nanocomposite thin films for photovoltaic applications. / Shih, G. H.; Allen, C. G.; Potter, Barrett G.

In: Solar Energy Materials and Solar Cells, Vol. 94, No. 5, 05.2010, p. 797-802.

Research output: Contribution to journalArticle

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