Rigorous modeling of lateral leakage loss in SOI thin-ridge waveguides and couplers

Thach G. Nguyen, Ravi S. Tummidi, Thomas L Koch, Arnan Mitchell

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

The transverse-magnetic to transverse-electric (TM-TE) mode coupling properties and the lateral leakage loss behavior of the propagating TM-like mode in silicon-on-insulator thin-ridge waveguides and directional couplers are investigated. Accurate calculation of the lateral leakage is performed by a mode matching technique in which the calculation window is left fully open in the lateral direction.

Original languageEnglish (US)
Pages (from-to)486-488
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number7
DOIs
StatePublished - Apr 1 2009
Externally publishedYes

Fingerprint

Ridge waveguides
SOI (semiconductors)
couplers
ridges
leakage
Waveguide couplers
waveguides
Directional couplers
directional couplers
Silicon
coupled modes
insulators
silicon
Direction compound

Keywords

  • Leaky waves
  • Optical losses
  • Optical waveguides
  • Silicon-on-insulator (SOI) technology

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Cite this

Rigorous modeling of lateral leakage loss in SOI thin-ridge waveguides and couplers. / Nguyen, Thach G.; Tummidi, Ravi S.; Koch, Thomas L; Mitchell, Arnan.

In: IEEE Photonics Technology Letters, Vol. 21, No. 7, 01.04.2009, p. 486-488.

Research output: Contribution to journalArticle

Nguyen, Thach G. ; Tummidi, Ravi S. ; Koch, Thomas L ; Mitchell, Arnan. / Rigorous modeling of lateral leakage loss in SOI thin-ridge waveguides and couplers. In: IEEE Photonics Technology Letters. 2009 ; Vol. 21, No. 7. pp. 486-488.
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