Role of band states and trap states in the electrical properties of organic semiconductors: Hopping versus mobility edge model

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42 Scopus citations

Abstract

We compare the merits of a hopping model and a mobility edge model in the description of the effect of charge-carrier concentration on the electrical conductivity, carrier mobility, and Fermi energy of organic semiconductors. We consider the case of a composite electronic density of states (DOS) that consists of a superposition of a Gaussian DOS and an exponential DOS. Using kinetic Monte Carlo simulations, we apply the two models in order to interpret the recent experimental data reported for n-doped C60 films. While both models are capable of reproducing the experimental data very well and yield qualitatively similar characteristic parameters for the density of states, some discrepancies are found at the quantitative level.

Original languageEnglish (US)
Article number195209
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume87
Issue number19
DOIs
StatePublished - May 28 2013
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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