Role of carrier diffusion in semiconductor microdisc lasers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A theoretical analysis of the influence of carrier diffusion on the threshold characteristics of semi-conductor microdisc lasers is given. The cold-cavity modes (Whispering Gallery Modes) and their wavelengths are obtained from approximate analytical solutions of Maxwell's equations. In the steady-state, the parameters of these modes are modified in an active semiconductor medium by the presence of intensity dependent gain, refractive index and diffusion of the carriers. An increase of threshold current with decreasing carriers' lifetime is predicted. Also, the dependence of the mode pulling on the diffusion length is discussed. These effects can be explained by considering spatially varying carrier density and therefore the spatially dependent refractive index and gain.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Pages176-187
Number of pages12
Volume2693
DOIs
StatePublished - Jan 1 1996
EventPhysics and Simulation of Optoelectronic Devices IV - San Jose, CA, USA
Duration: Jan 29 1996Feb 2 1996

Other

OtherPhysics and Simulation of Optoelectronic Devices IV
CitySan Jose, CA, USA
Period1/29/962/2/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Burak, D., & Binder, R. H. (1996). Role of carrier diffusion in semiconductor microdisc lasers. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2693, pp. 176-187) https://doi.org/10.1117/12.238953