Role of nitridation/reoxidation of NH3-nitrided gate dielectrics on the hot-carrier resistance of CMOS transistors

B. S. Doyle, A. Philipossian

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The effect of nitriding and reoxidizing conditions are examined on the hot-carrier (HC) properties of p-channel and n-channel transistors with reoxidized nitrided oxide gate dielectrics. Nitrogen was introduced into the gate dielectric by performing cyclical nitridation and reoxidation steps (one cycle versus four cycles of nit./reox.), keeping the same overall oxidation and nitridation times constant. It was found that there were considerable differences in hot-carrier hardness, of up to three orders of magnitude for p-channel transistors, but much less for n-channel devices. Nitrogen-content variations (a factor of 2) for these very similar conditions explain the n-channel hot-carrier results. In the case of the p-MOS transistors, it is suggested that changes in hydrogen concentration might be responsible for their hot-carrier behavior.

Original languageEnglish (US)
Pages (from-to)267-269
Number of pages3
JournalIEEE Electron Device Letters
Volume18
Issue number6
DOIs
StatePublished - Jun 1 1997
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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