ROOM-TEMPERATURE BULK GaAs: DOMINANT NONLINEARITIES, FAST-RECOVERY GATES, ARRAYS FOR PARALLEL PROCESSING.

H. M. Gibbs, N. Peyghambarian, Y. H. Lee, M. Warren, A. Chavez-Pirson, S. H. Park, J. Morhange, A. Jeffrey, S. W. Koch, A. C. Gossard, W. Wiegmann

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Reduction of continuum enhancement and band filling are the dominant optical nonlinearities at room temperature. Surface recombination gives a 30-ps recovery time following AND-gate operation. Reactive ion etching can be used to define large arrays of pixels for parallel processing.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
EditorsP. Guenter
PublisherSpringer-Verlag
Pages195-205
Number of pages11
ISBN (Print)3540175504
StatePublished - Dec 1 1987
EventElectro-opt and Photorefractive Mater, Proc of the Int Sch on Mater Sci and Technol - Erice, Italy
Duration: Jul 6 1986Jul 17 1986

Other

OtherElectro-opt and Photorefractive Mater, Proc of the Int Sch on Mater Sci and Technol
CityErice, Italy
Period7/6/867/17/86

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Gibbs, H. M., Peyghambarian, N., Lee, Y. H., Warren, M., Chavez-Pirson, A., Park, S. H., Morhange, J., Jeffrey, A., Koch, S. W., Gossard, A. C., & Wiegmann, W. (1987). ROOM-TEMPERATURE BULK GaAs: DOMINANT NONLINEARITIES, FAST-RECOVERY GATES, ARRAYS FOR PARALLEL PROCESSING. In P. Guenter (Ed.), Unknown Host Publication Title (pp. 195-205). Springer-Verlag.