ROOM TEMPERATURE EXCITONIC NONLINEAR ABSORPTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD).

H. C. Lee, A. Hariz, P. D. Dapkus, A. Kost, M. Kawase, E. Garmire

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The growth by metalorganic chemical vapor deposition (MOCVD) of GaAs/AlGaAs multiple quantum well (MQW) structures that exhibit narrow-line, room-temperature excitonic absorption is reported. The photoluminescence, excitation spectra, and absorption properties of single-quantum-well and MQW structures grown under a variety of growth conditions have been used to determine the optimal growth conditions for the fabrication of these devices. These characteristics are discussed, and an optimization methodology that does not require the growth of thick multilayers is described. The linear and nonlinear optical properties of these structures and the implications of this work for the construction of large-area arrays of switches are discussed.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
PublisherOptical Soc of America (Technical Digest Series v 13)
Pages85-87
Number of pages3
ISBN (Print)0936659505
StatePublished - 1987
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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