Room-temperature excitonic optical nonlinearities of molecular beam epitaxially grown ZnSe thin films

Nasser N Peyghambarian, S. H. Park, Stephan W Koch, A. Jeffery, J. E. Potts, H. Cheng

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

Large optical nonlinearities have been observed in molecular beam epitaxially grown thin films of ZnSe at room temperature and at T=150 K. A comparison with a plasma theory indicates that in both cases exciton screening is the dominating mechanism for the nonlinearity. The maximum nonlinear index per excited electron-hole pair at room temperature is comparable to that of bulk GaAs and GaAs-AlGaAs multiple quantum wells. The measured absorption and nonlinear index spectra agree quite well with our calculated values.

Original languageEnglish (US)
Pages (from-to)182-184
Number of pages3
JournalApplied Physics Letters
Volume52
Issue number3
DOIs
StatePublished - 1988

Fingerprint

molecular beams
nonlinearity
plasma physics
room temperature
thin films
aluminum gallium arsenides
screening
excitons
quantum wells

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Room-temperature excitonic optical nonlinearities of molecular beam epitaxially grown ZnSe thin films. / Peyghambarian, Nasser N; Park, S. H.; Koch, Stephan W; Jeffery, A.; Potts, J. E.; Cheng, H.

In: Applied Physics Letters, Vol. 52, No. 3, 1988, p. 182-184.

Research output: Contribution to journalArticle

@article{6fb0f51af5e14316b7280cd14a73df47,
title = "Room-temperature excitonic optical nonlinearities of molecular beam epitaxially grown ZnSe thin films",
abstract = "Large optical nonlinearities have been observed in molecular beam epitaxially grown thin films of ZnSe at room temperature and at T=150 K. A comparison with a plasma theory indicates that in both cases exciton screening is the dominating mechanism for the nonlinearity. The maximum nonlinear index per excited electron-hole pair at room temperature is comparable to that of bulk GaAs and GaAs-AlGaAs multiple quantum wells. The measured absorption and nonlinear index spectra agree quite well with our calculated values.",
author = "Peyghambarian, {Nasser N} and Park, {S. H.} and Koch, {Stephan W} and A. Jeffery and Potts, {J. E.} and H. Cheng",
year = "1988",
doi = "10.1063/1.99513",
language = "English (US)",
volume = "52",
pages = "182--184",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Room-temperature excitonic optical nonlinearities of molecular beam epitaxially grown ZnSe thin films

AU - Peyghambarian, Nasser N

AU - Park, S. H.

AU - Koch, Stephan W

AU - Jeffery, A.

AU - Potts, J. E.

AU - Cheng, H.

PY - 1988

Y1 - 1988

N2 - Large optical nonlinearities have been observed in molecular beam epitaxially grown thin films of ZnSe at room temperature and at T=150 K. A comparison with a plasma theory indicates that in both cases exciton screening is the dominating mechanism for the nonlinearity. The maximum nonlinear index per excited electron-hole pair at room temperature is comparable to that of bulk GaAs and GaAs-AlGaAs multiple quantum wells. The measured absorption and nonlinear index spectra agree quite well with our calculated values.

AB - Large optical nonlinearities have been observed in molecular beam epitaxially grown thin films of ZnSe at room temperature and at T=150 K. A comparison with a plasma theory indicates that in both cases exciton screening is the dominating mechanism for the nonlinearity. The maximum nonlinear index per excited electron-hole pair at room temperature is comparable to that of bulk GaAs and GaAs-AlGaAs multiple quantum wells. The measured absorption and nonlinear index spectra agree quite well with our calculated values.

UR - http://www.scopus.com/inward/record.url?scp=0039575509&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0039575509&partnerID=8YFLogxK

U2 - 10.1063/1.99513

DO - 10.1063/1.99513

M3 - Article

AN - SCOPUS:0039575509

VL - 52

SP - 182

EP - 184

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

ER -