Room-temperature optical nonlinearities of GaInAs/AlInAs and GaAlInAs/AlInAs multiple quantum wells and integrated-mirror etalons at 1.3 μm

C. C. Hsu, B. P. McGinnis, J. P. Sokoloff, G. Khitrova, H. M. Gibbs, N. Peyghambarian, S. T. Johns, M. F. Krol

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The room-temperature nonlinear absorption spectra of a 40 Å GaInAs/AlInAs and a 90 Å GaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 μm using a pump and probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2×10 18 and 1.0×1018 cm-3 with carrier recovery times of ≅5 ns and ≅750 ps for the two samples, respectively. These measured saturation carrier densities are close to the reported values for GaAs/AlGaAs MQWs. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical logic gate devices. We demonstrate a 125-ps recovery time for the etalon switching device at room temperature.

Original languageEnglish (US)
Pages (from-to)5615-5618
Number of pages4
JournalJournal of Applied Physics
Volume70
Issue number10
DOIs
StatePublished - Dec 1 1991

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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