The room-temperature nonlinear absorption spectra of a 40 Å GaInAs/AlInAs and a 90 Å GaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 μm using a pump and probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2×10 18 and 1.0×1018 cm-3 with carrier recovery times of ≅5 ns and ≅750 ps for the two samples, respectively. These measured saturation carrier densities are close to the reported values for GaAs/AlGaAs MQWs. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical logic gate devices. We demonstrate a 125-ps recovery time for the etalon switching device at room temperature.
ASJC Scopus subject areas
- Physics and Astronomy(all)