Room-temperature si single-electron memory fabricated by nanoimprint lithography

Wei Wu, Jian Gu, Haixiong Ge, Christopher Keimel, Stephen Y. Chou

Research output: Contribution to journalArticle

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Abstract

The design, fabrication and characterization of room-temperature Si single-electron memories (SEME) were reported. The nanoimprint lithography (NIL) was used. NIL was shown to be tailored for nanodevice fabrication. It was observed that by using NIL as a nanolithography tool, the single-electron memory was more feasible for mass production.

Original languageEnglish (US)
Pages (from-to)2268-2270
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number11
DOIs
StatePublished - Sep 15 2003
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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