Room-temperature si single-electron memory fabricated by nanoimprint lithography

Wei Wu, Jian Gu, Haixiong Ge, Christopher Keimel, Stephen Y. Chou

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

The design, fabrication and characterization of room-temperature Si single-electron memories (SEME) were reported. The nanoimprint lithography (NIL) was used. NIL was shown to be tailored for nanodevice fabrication. It was observed that by using NIL as a nanolithography tool, the single-electron memory was more feasible for mass production.

Original languageEnglish (US)
Pages (from-to)2268-2270
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number11
DOIs
StatePublished - Sep 15 2003
Externally publishedYes

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lithography
room temperature
fabrication
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Room-temperature si single-electron memory fabricated by nanoimprint lithography. / Wu, Wei; Gu, Jian; Ge, Haixiong; Keimel, Christopher; Chou, Stephen Y.

In: Applied Physics Letters, Vol. 83, No. 11, 15.09.2003, p. 2268-2270.

Research output: Contribution to journalArticle

Wu, Wei ; Gu, Jian ; Ge, Haixiong ; Keimel, Christopher ; Chou, Stephen Y. / Room-temperature si single-electron memory fabricated by nanoimprint lithography. In: Applied Physics Letters. 2003 ; Vol. 83, No. 11. pp. 2268-2270.
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