Scaling in the metal-insulator transition of the fractional quantum Hall effect

Stephan W Koch, R. J. Haug, K. von Klitzing, K. Ploog

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We study the magnetoresistance of a high-mobility two-dimensional electron gas at mK temperatures. In particular, the metal-insulator transitions between two adjacent fractional quantum Hall states ( 3 5- 2 3) and between an integral and a fractional quantum Hall plateau ( 2 3-1, 1-4 3 and 5 3-2) are investigated. We obtain a scaling behaviour of the width ΔB of the transition region as a function of the temperature T: ΔB ∝ Tk, for T below a characteristic temperature Tc. Within the experimental error, the exponent κ is the same for all the transitions and is found to be in the range from 0.40 to 0.45. These findings agree with the results of recent theoretical studies. We study the effect of tilted magnetic fields on the scaling behaviour and find a considerable influence of the electronic spin.

Original languageEnglish (US)
Pages (from-to)72-75
Number of pages4
JournalPhysica B: Condensed Matter
Volume184
Issue number1-4
DOIs
StatePublished - 1993
Externally publishedYes

Fingerprint

Quantum Hall effect
Metal insulator transition
quantum Hall effect
insulators
scaling
metals
Two dimensional electron gas
Magnetoresistance
Temperature
temperature
electron gas
plateaus
exponents
Magnetic fields
electronics
magnetic fields

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Scaling in the metal-insulator transition of the fractional quantum Hall effect. / Koch, Stephan W; Haug, R. J.; von Klitzing, K.; Ploog, K.

In: Physica B: Condensed Matter, Vol. 184, No. 1-4, 1993, p. 72-75.

Research output: Contribution to journalArticle

Koch, Stephan W ; Haug, R. J. ; von Klitzing, K. ; Ploog, K. / Scaling in the metal-insulator transition of the fractional quantum Hall effect. In: Physica B: Condensed Matter. 1993 ; Vol. 184, No. 1-4. pp. 72-75.
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