### Abstract

We study the magnetoresistance of a high-mobility two-dimensional electron gas at mK temperatures. In particular, the metal-insulator transitions between two adjacent fractional quantum Hall states ( 3 5- 2 3) and between an integral and a fractional quantum Hall plateau ( 2 3-1, 1-4 3 and 5 3-2) are investigated. We obtain a scaling behaviour of the width ΔB of the transition region as a function of the temperature T: ΔB ∝ T^{k}, for T below a characteristic temperature T_{c}. Within the experimental error, the exponent κ is the same for all the transitions and is found to be in the range from 0.40 to 0.45. These findings agree with the results of recent theoretical studies. We study the effect of tilted magnetic fields on the scaling behaviour and find a considerable influence of the electronic spin.

Original language | English (US) |
---|---|

Pages (from-to) | 72-75 |

Number of pages | 4 |

Journal | Physica B: Physics of Condensed Matter |

Volume | 184 |

Issue number | 1-4 |

DOIs | |

State | Published - Feb 1993 |

### ASJC Scopus subject areas

- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering

## Fingerprint Dive into the research topics of 'Scaling in the metal-insulator transition of the fractional quantum Hall effect'. Together they form a unique fingerprint.

## Cite this

*Physica B: Physics of Condensed Matter*,

*184*(1-4), 72-75. https://doi.org/10.1016/0921-4526(93)90323-X