### Abstract

We study the magnetoresistance of a high-mobility two-dimensional electron gas at mK temperatures. In particular, the metal-insulator transitions between two adjacent fractional quantum Hall states ( 3 5- 2 3) and between an integral and a fractional quantum Hall plateau ( 2 3-1, 1-4 3 and 5 3-2) are investigated. We obtain a scaling behaviour of the width ΔB of the transition region as a function of the temperature T: ΔB ∝ T^{k}, for T below a characteristic temperature T_{c}. Within the experimental error, the exponent κ is the same for all the transitions and is found to be in the range from 0.40 to 0.45. These findings agree with the results of recent theoretical studies. We study the effect of tilted magnetic fields on the scaling behaviour and find a considerable influence of the electronic spin.

Original language | English (US) |
---|---|

Pages (from-to) | 72-75 |

Number of pages | 4 |

Journal | Physica B: Condensed Matter |

Volume | 184 |

Issue number | 1-4 |

DOIs | |

State | Published - 1993 |

Externally published | Yes |

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### ASJC Scopus subject areas

- Materials Science(all)
- Condensed Matter Physics

### Cite this

*Physica B: Condensed Matter*,

*184*(1-4), 72-75. https://doi.org/10.1016/0921-4526(93)90323-X

**Scaling in the metal-insulator transition of the fractional quantum Hall effect.** / Koch, Stephan W; Haug, R. J.; von Klitzing, K.; Ploog, K.

Research output: Contribution to journal › Article

*Physica B: Condensed Matter*, vol. 184, no. 1-4, pp. 72-75. https://doi.org/10.1016/0921-4526(93)90323-X

}

TY - JOUR

T1 - Scaling in the metal-insulator transition of the fractional quantum Hall effect

AU - Koch, Stephan W

AU - Haug, R. J.

AU - von Klitzing, K.

AU - Ploog, K.

PY - 1993

Y1 - 1993

N2 - We study the magnetoresistance of a high-mobility two-dimensional electron gas at mK temperatures. In particular, the metal-insulator transitions between two adjacent fractional quantum Hall states ( 3 5- 2 3) and between an integral and a fractional quantum Hall plateau ( 2 3-1, 1-4 3 and 5 3-2) are investigated. We obtain a scaling behaviour of the width ΔB of the transition region as a function of the temperature T: ΔB ∝ Tk, for T below a characteristic temperature Tc. Within the experimental error, the exponent κ is the same for all the transitions and is found to be in the range from 0.40 to 0.45. These findings agree with the results of recent theoretical studies. We study the effect of tilted magnetic fields on the scaling behaviour and find a considerable influence of the electronic spin.

AB - We study the magnetoresistance of a high-mobility two-dimensional electron gas at mK temperatures. In particular, the metal-insulator transitions between two adjacent fractional quantum Hall states ( 3 5- 2 3) and between an integral and a fractional quantum Hall plateau ( 2 3-1, 1-4 3 and 5 3-2) are investigated. We obtain a scaling behaviour of the width ΔB of the transition region as a function of the temperature T: ΔB ∝ Tk, for T below a characteristic temperature Tc. Within the experimental error, the exponent κ is the same for all the transitions and is found to be in the range from 0.40 to 0.45. These findings agree with the results of recent theoretical studies. We study the effect of tilted magnetic fields on the scaling behaviour and find a considerable influence of the electronic spin.

UR - http://www.scopus.com/inward/record.url?scp=0027544204&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027544204&partnerID=8YFLogxK

U2 - 10.1016/0921-4526(93)90323-X

DO - 10.1016/0921-4526(93)90323-X

M3 - Article

AN - SCOPUS:0027544204

VL - 184

SP - 72

EP - 75

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1-4

ER -