Scanning tunneling spectroscopy of suspended single-wall carbon nanotubes

Brian J Leroy, S. G. Lemay, J. Kong, C. Dekker

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

Low-temperature scanning tunneling microscopy measurements were performed on single-wall carbon nanotubes that are freely suspended over a trench. On a Pt substrate with predefined trenches etched into it, the nanotubes were grown by chemical vapor deposition. Spatially resolved spectroscopy on the suspended portion of both metallic and semiconducting nanotubes was achieved. The results show that the spacing of the Coulomb blockade peaks changed with tip position reflecting a changing tip-tube capacitance.

Original languageEnglish (US)
Pages (from-to)4280-4282
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number21
DOIs
StatePublished - May 24 2004
Externally publishedYes

Fingerprint

nanotubes
carbon nanotubes
scanning
spectroscopy
scanning tunneling microscopy
capacitance
spacing
vapor deposition
tubes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Scanning tunneling spectroscopy of suspended single-wall carbon nanotubes. / Leroy, Brian J; Lemay, S. G.; Kong, J.; Dekker, C.

In: Applied Physics Letters, Vol. 84, No. 21, 24.05.2004, p. 4280-4282.

Research output: Contribution to journalArticle

Leroy, Brian J ; Lemay, S. G. ; Kong, J. ; Dekker, C. / Scanning tunneling spectroscopy of suspended single-wall carbon nanotubes. In: Applied Physics Letters. 2004 ; Vol. 84, No. 21. pp. 4280-4282.
@article{fcb01b68646b4d97812068bc5e175e25,
title = "Scanning tunneling spectroscopy of suspended single-wall carbon nanotubes",
abstract = "Low-temperature scanning tunneling microscopy measurements were performed on single-wall carbon nanotubes that are freely suspended over a trench. On a Pt substrate with predefined trenches etched into it, the nanotubes were grown by chemical vapor deposition. Spatially resolved spectroscopy on the suspended portion of both metallic and semiconducting nanotubes was achieved. The results show that the spacing of the Coulomb blockade peaks changed with tip position reflecting a changing tip-tube capacitance.",
author = "Leroy, {Brian J} and Lemay, {S. G.} and J. Kong and C. Dekker",
year = "2004",
month = "5",
day = "24",
doi = "10.1063/1.1748836",
language = "English (US)",
volume = "84",
pages = "4280--4282",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "21",

}

TY - JOUR

T1 - Scanning tunneling spectroscopy of suspended single-wall carbon nanotubes

AU - Leroy, Brian J

AU - Lemay, S. G.

AU - Kong, J.

AU - Dekker, C.

PY - 2004/5/24

Y1 - 2004/5/24

N2 - Low-temperature scanning tunneling microscopy measurements were performed on single-wall carbon nanotubes that are freely suspended over a trench. On a Pt substrate with predefined trenches etched into it, the nanotubes were grown by chemical vapor deposition. Spatially resolved spectroscopy on the suspended portion of both metallic and semiconducting nanotubes was achieved. The results show that the spacing of the Coulomb blockade peaks changed with tip position reflecting a changing tip-tube capacitance.

AB - Low-temperature scanning tunneling microscopy measurements were performed on single-wall carbon nanotubes that are freely suspended over a trench. On a Pt substrate with predefined trenches etched into it, the nanotubes were grown by chemical vapor deposition. Spatially resolved spectroscopy on the suspended portion of both metallic and semiconducting nanotubes was achieved. The results show that the spacing of the Coulomb blockade peaks changed with tip position reflecting a changing tip-tube capacitance.

UR - http://www.scopus.com/inward/record.url?scp=2942635773&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942635773&partnerID=8YFLogxK

U2 - 10.1063/1.1748836

DO - 10.1063/1.1748836

M3 - Article

AN - SCOPUS:2942635773

VL - 84

SP - 4280

EP - 4282

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

ER -