Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride

Jiamin Xue, Javier Sanchez-Yamagishi, Danny Bulmash, Philippe Jacquod, Aparna Deshpande, K. Watanabe, T. Taniguchi, Pablo Jarillo-Herrero, Brian J. Leroy

Research output: Contribution to journalArticle

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Abstract

Graphene has demonstrated great promise for future electronics technology as well as fundamental physics applications because of its linear energy-momentum dispersion relations which cross at the Dirac point. However, accessing the physics of the low-density region at the Dirac point has been difficult because of disorder that leaves the graphene with local microscopic electron and hole puddles. Efforts have been made to reduce the disorder by suspending graphene, leading to fabrication challenges and delicate devices which make local spectroscopic measurements difficult. Recently, it has been shown that placing graphene on hexagonal boron nitride (hBN) yields improved device performance. Here we use scanning tunnelling microscopy to show that graphene conforms to hBN, as evidenced by the presence of MoirÃ

Original languageEnglish (US)
Pages (from-to)282-285
Number of pages4
JournalNature materials
Volume10
Issue number4
DOIs
StatePublished - Apr 2011

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ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Xue, J., Sanchez-Yamagishi, J., Bulmash, D., Jacquod, P., Deshpande, A., Watanabe, K., Taniguchi, T., Jarillo-Herrero, P., & Leroy, B. J. (2011). Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride. Nature materials, 10(4), 282-285. https://doi.org/10.1038/nmat2968