Selective removal of native SiO2 Using XeF2

A. Hinckley, P. Mancheno, C. S. Lai, Anthony J Muscat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The selective removal of native SiO2 with respect to Si and thermal SiO2 using XeF2 was studied with ellipsometry, temperatureprogrammed desorption (TPD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and x-ray photoelectron spectroscopy (XPS). The native SiO2 layer was removed with a static process at a pressure of 1 Torr and room temperature, but the Si substrate was roughened on a micron scale. To avoid roughening, a continuous flow of XeF2 was used at pressures lower than 10 mTorr. XPS analysis confirmed that the XeF2 exposure fluorinated the native oxide and both the oxide and fluorine were removed by heating to 925 K (650 °C). AFM showed no change in surface roughness after the low pressure exposure and heating, and together with XPS peak area ratios before and after XeF2 show that the native oxide was etched without etching the underlying Si substrate.

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages225-232
Number of pages8
Volume69
Edition7
ISBN (Print)9781607685395
DOIs
StatePublished - 2015
EventSymposium on Atomic Layer Deposition Applications 11 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Other

OtherSymposium on Atomic Layer Deposition Applications 11 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period10/11/1510/15/15

ASJC Scopus subject areas

  • Engineering(all)

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    Hinckley, A., Mancheno, P., Lai, C. S., & Muscat, A. J. (2015). Selective removal of native SiO2 Using XeF2 In ECS Transactions (7 ed., Vol. 69, pp. 225-232). Electrochemical Society Inc.. https://doi.org/10.1149/06907.0225ecst