Selective removal of native SiO2 Using XeF2

A. Hinckley, P. Mancheno, C. S. Lai, A. J. Muscat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


The selective removal of native SiO2 with respect to Si and thermal SiO2 using XeF2 was studied with ellipsometry, temperatureprogrammed desorption (TPD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and x-ray photoelectron spectroscopy (XPS). The native SiO2 layer was removed with a static process at a pressure of 1 Torr and room temperature, but the Si substrate was roughened on a micron scale. To avoid roughening, a continuous flow of XeF2 was used at pressures lower than 10 mTorr. XPS analysis confirmed that the XeF2 exposure fluorinated the native oxide and both the oxide and fluorine were removed by heating to 925 K (650 °C). AFM showed no change in surface roughness after the low pressure exposure and heating, and together with XPS peak area ratios before and after XeF2 show that the native oxide was etched without etching the underlying Si substrate.

Original languageEnglish (US)
Title of host publicationAtomic Layer Deposition Applications 11
EditorsF. Roozeboom, S. De Gendt, A. Delabie, J. W. Elam, O. van der Straten, C. Huffman
PublisherElectrochemical Society Inc.
Number of pages8
ISBN (Electronic)9781607685395
StatePublished - 2015
EventSymposium on Atomic Layer Deposition Applications 11 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Publication series

NameECS Transactions
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862


OtherSymposium on Atomic Layer Deposition Applications 11 - 228th ECS Meeting
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Engineering(all)


Dive into the research topics of 'Selective removal of native SiO2 Using XeF2'. Together they form a unique fingerprint.

Cite this