Semiconductor Kadanoff-Baym equation results for optically excited electron-hole plasmas in quantum wells

Nai-Hang Kwong, M. Bonitz, Rudolf Binder, H. S. Köhler

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60 Citations (Scopus)

Abstract

We present results from solutions of the semiconductor Kadanoff-Baym equations (full two-time semiconductor Bloch equations) with self-energies in quasistatic Born approximation, for GaAs single quantum wells. We concentrate on memory and correlation effects under fs-pulse excitation conditions. A remarkable feature is the observed kinetic energy increase which is due to the build-up of correlations among the generated carriers. We demonstrate that the two-time approach is (i) very well suited to study correlation phenomena both on short and long times, thereby avoiding well-known problems of one-time kinetic equations, and (ii) that it is becoming practical with the use of efficient integration techniques.

Original languageEnglish (US)
Pages (from-to)197-203
Number of pages7
JournalPhysica Status Solidi (B) Basic Research
Volume206
Issue number1
StatePublished - Mar 1998

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Semiconductor quantum wells
quantum wells
Semiconductor materials
Plasmas
Born approximation
Electrons
Kinetic energy
Data storage equipment
kinetic equations
Kinetics
kinetic energy
pulses
excitation
energy
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Semiconductor Kadanoff-Baym equation results for optically excited electron-hole plasmas in quantum wells. / Kwong, Nai-Hang; Bonitz, M.; Binder, Rudolf; Köhler, H. S.

In: Physica Status Solidi (B) Basic Research, Vol. 206, No. 1, 03.1998, p. 197-203.

Research output: Contribution to journalArticle

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