Semiconductor lasers

Stephan W. Koch, Martin R. Hofmann

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Scopus citations

Abstract

This article discusses the principle of operation and the basic material engineering aspects for the design of semiconductor lasers. The physics of the gain medium is analyzed with an emphasis on the role of many-body effects due to the Coulomb interaction of the carriers for the optical properties of the active semiconductor material. The two main types of laser resonators for diode lasers, Fabry-Perot resonators and vertical-cavity structures, are described. Finally, the dynamics of semiconductor lasers including the principles of short pulse generation and nonequilibrium gain dynamics is addressed.

Original languageEnglish (US)
Title of host publicationEncyclopedia of Modern Optics
PublisherElsevier
Pages462-468
Number of pages7
Volume1-5
ISBN (Electronic)9780128149829
ISBN (Print)9780128092835
DOIs
StatePublished - Jan 1 2018
Externally publishedYes

Keywords

  • Coulomb effects in lasers
  • Diode laser
  • Fabry-Perot resonator
  • Gain
  • Laser dynamics
  • Many-body effects
  • Modelocking
  • Semiconductor laser
  • Short-pulse generation
  • Vertical-cavity laser

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

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