Semiconductor microcavities in the strong coupling regime

D. V. Wick, Jr Nelson, E. K. Lindmark, Hyatt M. Gibbs, Galina Khitrova, Kuochou Tai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A single narrow-linewidth quantum-well absorption peak is coupled to the single-mode resonance of a moderately high reflectivity microcavity, resulting in an anticrossing curve as a function of relative detuning. For zero detuning, two cavity peaks and two photoluminescence peaks are seen. Two quantum wells with different resonant energies result in a system of three coupled oscillators. Nonlinear studies include determination of the nonlinearities of the quantum wells, observation of optical bistability, and saturation of the microcavity transmission.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsWeng W. Chow, Marek Osinski
Pages160-169
Number of pages10
StatePublished - Jan 1 1996
EventPhysics and Simulation of Optoelectronic Devices IV - San Jose, CA, USA
Duration: Jan 29 1996Feb 2 1996

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2693

Other

OtherPhysics and Simulation of Optoelectronic Devices IV
CitySan Jose, CA, USA
Period1/29/962/2/96

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Wick, D. V., Nelson, J., Lindmark, E. K., Gibbs, H. M., Khitrova, G., & Tai, K. (1996). Semiconductor microcavities in the strong coupling regime. In W. W. Chow, & M. Osinski (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 160-169). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2693).