Semiconductor pattern analysis with induced polarization

Tao Chen, Thomas D Milster, Seung Hune Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Image contrast enhancement, resolution improvement and accurate height information are obtained by near-field induced polarization imaging using a solid immersion lens (SIL) microscopy. A semiconductor PC processor is investigated by this imaging technology. With 520nm linear polarization illumination, around 100nm feature size is resolvable, and topographical information is also achieved from this induced polarization image. We demonstrate this near-field induced polarization imaging is a fast acquisition, large field and high resolution metrology solution.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsJ. Tracy Weed, P.M. Martin
Volume5992
Edition1
DOIs
StatePublished - 2005
Event25th Annual BACUS Symposium on Photomask Technology - Monterey, CA, United States
Duration: Oct 4 2005Oct 7 2005

Other

Other25th Annual BACUS Symposium on Photomask Technology
CountryUnited States
CityMonterey, CA
Period10/4/0510/7/05

Fingerprint

Polarization
Semiconductor materials
near fields
polarization
Imaging techniques
image contrast
linear polarization
metrology
submerging
central processing units
acquisition
illumination
lenses
microscopy
Lenses
Microscopic examination
augmentation
Lighting
high resolution

Keywords

  • High resolution
  • Induced polarization imaging
  • Near-field microscope
  • Solid immersion lens (SIL)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Chen, T., Milster, T. D., & Yang, S. H. (2005). Semiconductor pattern analysis with induced polarization. In J. Tracy Weed, & P. M. Martin (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (1 ed., Vol. 5992). [59921L] https://doi.org/10.1117/12.632240

Semiconductor pattern analysis with induced polarization. / Chen, Tao; Milster, Thomas D; Yang, Seung Hune.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / J. Tracy Weed; P.M. Martin. Vol. 5992 1. ed. 2005. 59921L.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, T, Milster, TD & Yang, SH 2005, Semiconductor pattern analysis with induced polarization. in J Tracy Weed & PM Martin (eds), Proceedings of SPIE - The International Society for Optical Engineering. 1 edn, vol. 5992, 59921L, 25th Annual BACUS Symposium on Photomask Technology, Monterey, CA, United States, 10/4/05. https://doi.org/10.1117/12.632240
Chen T, Milster TD, Yang SH. Semiconductor pattern analysis with induced polarization. In Tracy Weed J, Martin PM, editors, Proceedings of SPIE - The International Society for Optical Engineering. 1 ed. Vol. 5992. 2005. 59921L https://doi.org/10.1117/12.632240
Chen, Tao ; Milster, Thomas D ; Yang, Seung Hune. / Semiconductor pattern analysis with induced polarization. Proceedings of SPIE - The International Society for Optical Engineering. editor / J. Tracy Weed ; P.M. Martin. Vol. 5992 1. ed. 2005.
@inproceedings{93a044bf69c841f59d826c8715aa35e3,
title = "Semiconductor pattern analysis with induced polarization",
abstract = "Image contrast enhancement, resolution improvement and accurate height information are obtained by near-field induced polarization imaging using a solid immersion lens (SIL) microscopy. A semiconductor PC processor is investigated by this imaging technology. With 520nm linear polarization illumination, around 100nm feature size is resolvable, and topographical information is also achieved from this induced polarization image. We demonstrate this near-field induced polarization imaging is a fast acquisition, large field and high resolution metrology solution.",
keywords = "High resolution, Induced polarization imaging, Near-field microscope, Solid immersion lens (SIL)",
author = "Tao Chen and Milster, {Thomas D} and Yang, {Seung Hune}",
year = "2005",
doi = "10.1117/12.632240",
language = "English (US)",
volume = "5992",
editor = "{Tracy Weed}, J. and P.M. Martin",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
edition = "1",

}

TY - GEN

T1 - Semiconductor pattern analysis with induced polarization

AU - Chen, Tao

AU - Milster, Thomas D

AU - Yang, Seung Hune

PY - 2005

Y1 - 2005

N2 - Image contrast enhancement, resolution improvement and accurate height information are obtained by near-field induced polarization imaging using a solid immersion lens (SIL) microscopy. A semiconductor PC processor is investigated by this imaging technology. With 520nm linear polarization illumination, around 100nm feature size is resolvable, and topographical information is also achieved from this induced polarization image. We demonstrate this near-field induced polarization imaging is a fast acquisition, large field and high resolution metrology solution.

AB - Image contrast enhancement, resolution improvement and accurate height information are obtained by near-field induced polarization imaging using a solid immersion lens (SIL) microscopy. A semiconductor PC processor is investigated by this imaging technology. With 520nm linear polarization illumination, around 100nm feature size is resolvable, and topographical information is also achieved from this induced polarization image. We demonstrate this near-field induced polarization imaging is a fast acquisition, large field and high resolution metrology solution.

KW - High resolution

KW - Induced polarization imaging

KW - Near-field microscope

KW - Solid immersion lens (SIL)

UR - http://www.scopus.com/inward/record.url?scp=33644593387&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644593387&partnerID=8YFLogxK

U2 - 10.1117/12.632240

DO - 10.1117/12.632240

M3 - Conference contribution

AN - SCOPUS:33644593387

VL - 5992

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Tracy Weed, J.

A2 - Martin, P.M.

ER -