Semiconductor pattern analysis with induced polarization

Tao Chen, Tom Muster, Seung Hune Yang

Research output: Contribution to journalConference article

Abstract

Image contrast enhancement, resolution improvement and accurate height information are obtained by near-field induced polarization imaging using a solid immersion lens (SIL) microscopy. A semiconductor PC processor is investigated by this imaging technology. With 520nm linear polarization illumination, around 100nm feature size is resolvable, and topographical information is also achieved from this induced polarization image. We demonstrate this near-field induced polarization imaging is a fast acquisition, large field and high resolution metrology solution.

Original languageEnglish (US)
Article number59921L
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5992
Issue number1
DOIs
StatePublished - Dec 1 2005
Event25th Annual BACUS Symposium on Photomask Technology - Monterey, CA, United States
Duration: Oct 4 2005Oct 7 2005

Keywords

  • High resolution
  • Induced polarization imaging
  • Near-field microscope
  • Solid immersion lens (SIL)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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