Semiconductor quantum-well (QW) designer active materials were discussed. The optical properties of QW semiconductor materials were studied. Photoluminescence spectra at different illumination intensities for 5-nm In0.2Ga0.8As was also investigated. The gain spectra at different carrier densities was also discussed.
|Original language||English (US)|
|Number of pages||1|
|Journal||Optics and Photonics News|
|Publication status||Published - 2002|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics