Semiconductor quantum-well designer active materials

Jorg Hader, A. R. Zakharian, Jerome V Moloney, T. R. Nelson, W. J. Siskaninetz, J. E. Ehret, K. Hantke, Stephan W Koch, M. Hofmann

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Semiconductor quantum-well (QW) designer active materials were discussed. The optical properties of QW semiconductor materials were studied. Photoluminescence spectra at different illumination intensities for 5-nm In0.2Ga0.8As was also investigated. The gain spectra at different carrier densities was also discussed.

Original languageEnglish (US)
Pages (from-to)22
Number of pages1
JournalOptics and Photonics News
Volume13
Issue number12
Publication statusPublished - 2002

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Hader, J., Zakharian, A. R., Moloney, J. V., Nelson, T. R., Siskaninetz, W. J., Ehret, J. E., ... Hofmann, M. (2002). Semiconductor quantum-well designer active materials. Optics and Photonics News, 13(12), 22.