Semiconductor quantum-well designer active materials

J. Hader, A. R. Zakharian, J. V. Moloney, T. R. Nelson, W. J. Siskaninetz, J. E. Ehret, K. Hantke, S. W. Koch, M. Hofmann

Research output: Contribution to specialist publicationArticle

8 Scopus citations

Abstract

Semiconductor quantum-well (QW) designer active materials were discussed. The optical properties of QW semiconductor materials were studied. Photoluminescence spectra at different illumination intensities for 5-nm In0.2Ga0.8As was also investigated. The gain spectra at different carrier densities was also discussed.

Original languageEnglish (US)
Number of pages1
Volume13
No12
Specialist publicationOptics and Photonics News
StatePublished - Dec 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Hader, J., Zakharian, A. R., Moloney, J. V., Nelson, T. R., Siskaninetz, W. J., Ehret, J. E., Hantke, K., Koch, S. W., & Hofmann, M. (2002). Semiconductor quantum-well designer active materials. Optics and Photonics News, 13(12).