Semiconductor unstable resonators with laterally finite mirrors

Robert Bedford, Mahmoud Fallahi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The design of semiconductor-based unstable resonators with laterally finite mirrors is investigated. A time-independent model used for tapered cavity semiconductor lasers is implemented to analyze this cavity design. Initial investigations show a significant improvement in external quantum efficiency, as well as a decrease in threshold current density as compared to the traditional tapered lasers with laterally infinite mirrors. The advantages and disadvantages of the proposed design will be discussed.

Original languageEnglish (US)
Pages (from-to)716-723
Number of pages8
JournalIEEE Journal of Quantum Electronics
Volume38
Issue number7
DOIs
StatePublished - Jul 2002

Fingerprint

Resonators
resonators
Semiconductor materials
mirrors
Threshold current density
cavities
Quantum efficiency
threshold currents
Semiconductor lasers
quantum efficiency
semiconductor lasers
current density
Lasers
lasers

Keywords

  • Finite mirror
  • High power
  • Semiconductor laser
  • Tapered gain section
  • Unstable

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Semiconductor unstable resonators with laterally finite mirrors. / Bedford, Robert; Fallahi, Mahmoud.

In: IEEE Journal of Quantum Electronics, Vol. 38, No. 7, 07.2002, p. 716-723.

Research output: Contribution to journalArticle

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