Semiconductor unstable resonators with laterally finite mirrors

Robert Bedford, Mahmoud Fallahi

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

The design of semiconductor-based unstable resonators with laterally finite mirrors is investigated. A time-independent model used for tapered cavity semiconductor lasers is implemented to analyze this cavity design. Initial investigations show a significant improvement in external quantum efficiency, as well as a decrease in threshold current density as compared to the traditional tapered lasers with laterally infinite mirrors. The advantages and disadvantages of the proposed design will be discussed.

Original languageEnglish (US)
Pages (from-to)716-723
Number of pages8
JournalIEEE Journal of Quantum Electronics
Volume38
Issue number7
DOIs
StatePublished - Jul 1 2002

Keywords

  • Finite mirror
  • High power
  • Semiconductor laser
  • Tapered gain section
  • Unstable

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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