SESAM Q-Switched Ho3+-Doped ZBLAN Fiber Laser at 1190 nm

Yuchen Wang, Xiushan Zhu, Chuanxiang Sheng, Li Li, Qian Chen, Jie Zong, Kort Wiersma, Arturo Chavez-Pirson, Robert A Norwood, Nasser N Peyghambarian

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

We report a semiconductor saturable absorber mirror Q-switched holmium (Ho3+)-doped ZrF4-BaF2-LaF3-AlF3-NaF fiber laser operating at ∼1190 nm in a linear cavity. Stable Q-switched operation was established at a threshold pump power of 92.8 mW with a repetition rate of 26.1 kHz and a pulsewidth of 4 μs. The repetition rate increased and the pulsewidth decreased with an increasing pump power. When the pump power was increased to 830 mW, 800-ns Q-switched pulses with a pulse energy of 0.18 μJ at a repetition rate of 170 kHz were generated.

Original languageEnglish (US)
Article number7879214
Pages (from-to)743-746
Number of pages4
JournalIEEE Photonics Technology Letters
Volume29
Issue number9
DOIs
StatePublished - May 1 2017

Keywords

  • 1.2 μm lasers
  • Ho-doped ZBLAN fiber laser
  • Q-switched fiber lasers
  • semiconductor saturable absorber mirror

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Wang, Y., Zhu, X., Sheng, C., Li, L., Chen, Q., Zong, J., Wiersma, K., Chavez-Pirson, A., Norwood, R. A., & Peyghambarian, N. N. (2017). SESAM Q-Switched Ho3+-Doped ZBLAN Fiber Laser at 1190 nm. IEEE Photonics Technology Letters, 29(9), 743-746. [7879214]. https://doi.org/10.1109/LPT.2017.2682921