Si-SiO2 interface formation in low-dose low-energy separation by implanted oxygen materials

Research output: Contribution to journalArticle

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Abstract

The evolution of the Si-SiO2 interface morphology of low-dose low-energy separation by implanted oxygen materials was investigated by transmission electron microscopy and atomic force microscopy. The Si-SiO 2 interface morphology and the RMS roughness are strongly affected by the implantation conditions and the annealing process. Three main types of the domains including round, square, and pyramid shapes with the step-terrace structure were observed on the buried SiO2 surface. Round domains are observed in the early stage of the annealing process, while the square and pyramid domains are observed after the high temperature annealing. The mean RMS roughness decreases with increasing time and annealing temperature, while in the 1350 °C 4-h annealed samples, the mean RMS roughness decreases with either increasing the implantation dose or decreasing implantation energy. The scaling analysis shows that the Si-SiO2 interfaces were found to be self-affine on the short length scales with a roughness exponent above 0.50. Qualitative mechanisms of Si-SiO2 surface flattening are presented in terms of the variations of morphological features with the processing conditions.

Original languageEnglish (US)
Pages (from-to)168-181
Number of pages14
JournalApplied Surface Science
Volume250
Issue number1-4
DOIs
StatePublished - Aug 31 2005

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roughness
Surface roughness
Annealing
Oxygen
implantation
dosage
annealing
oxygen
pyramids
energy
flattening
Atomic force microscopy
atomic force microscopy
exponents
Transmission electron microscopy
scaling
Temperature
transmission electron microscopy
Processing
temperature

Keywords

  • Atomic force microscopy
  • Scaling analysis
  • Self-affine scaling
  • Separation by implanted oxygen materials
  • Si-SiO interfaces

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Si-SiO2 interface formation in low-dose low-energy separation by implanted oxygen materials. / Jutarosaga, Tula; Manne, Srinivas; Seraphin, Supapan.

In: Applied Surface Science, Vol. 250, No. 1-4, 31.08.2005, p. 168-181.

Research output: Contribution to journalArticle

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abstract = "The evolution of the Si-SiO2 interface morphology of low-dose low-energy separation by implanted oxygen materials was investigated by transmission electron microscopy and atomic force microscopy. The Si-SiO 2 interface morphology and the RMS roughness are strongly affected by the implantation conditions and the annealing process. Three main types of the domains including round, square, and pyramid shapes with the step-terrace structure were observed on the buried SiO2 surface. Round domains are observed in the early stage of the annealing process, while the square and pyramid domains are observed after the high temperature annealing. The mean RMS roughness decreases with increasing time and annealing temperature, while in the 1350 °C 4-h annealed samples, the mean RMS roughness decreases with either increasing the implantation dose or decreasing implantation energy. The scaling analysis shows that the Si-SiO2 interfaces were found to be self-affine on the short length scales with a roughness exponent above 0.50. Qualitative mechanisms of Si-SiO2 surface flattening are presented in terms of the variations of morphological features with the processing conditions.",
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N2 - The evolution of the Si-SiO2 interface morphology of low-dose low-energy separation by implanted oxygen materials was investigated by transmission electron microscopy and atomic force microscopy. The Si-SiO 2 interface morphology and the RMS roughness are strongly affected by the implantation conditions and the annealing process. Three main types of the domains including round, square, and pyramid shapes with the step-terrace structure were observed on the buried SiO2 surface. Round domains are observed in the early stage of the annealing process, while the square and pyramid domains are observed after the high temperature annealing. The mean RMS roughness decreases with increasing time and annealing temperature, while in the 1350 °C 4-h annealed samples, the mean RMS roughness decreases with either increasing the implantation dose or decreasing implantation energy. The scaling analysis shows that the Si-SiO2 interfaces were found to be self-affine on the short length scales with a roughness exponent above 0.50. Qualitative mechanisms of Si-SiO2 surface flattening are presented in terms of the variations of morphological features with the processing conditions.

AB - The evolution of the Si-SiO2 interface morphology of low-dose low-energy separation by implanted oxygen materials was investigated by transmission electron microscopy and atomic force microscopy. The Si-SiO 2 interface morphology and the RMS roughness are strongly affected by the implantation conditions and the annealing process. Three main types of the domains including round, square, and pyramid shapes with the step-terrace structure were observed on the buried SiO2 surface. Round domains are observed in the early stage of the annealing process, while the square and pyramid domains are observed after the high temperature annealing. The mean RMS roughness decreases with increasing time and annealing temperature, while in the 1350 °C 4-h annealed samples, the mean RMS roughness decreases with either increasing the implantation dose or decreasing implantation energy. The scaling analysis shows that the Si-SiO2 interfaces were found to be self-affine on the short length scales with a roughness exponent above 0.50. Qualitative mechanisms of Si-SiO2 surface flattening are presented in terms of the variations of morphological features with the processing conditions.

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