Si/B4C narrow-bandpass mirrors for the extreme ultraviolet

J. M. Slaughter, Brian S. Medower, R. N. Watts, C. Tarrio, T. B. Lucatorto, Charles M. Falco

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

We report the results of extreme-ultraviolet reflectance measurements and structural characterization of multilayer mirrors made by sequential sputter deposition of Si and B4C. Compared with Si/Mo multilayers, Si/B4C have a much narrower bandpass (δλ) and better off-peak rejection but lower peak reflectance (R0). Mirrors with three different designs gave the following results: R0 = 0.275 and δλ = 0.31 nm at 13.1 nm and normal incidence; R0 = 0.34 and δλ = 1.1 nm at 18.2 nm and 45°; and R0 = 0.30 and δλ= 2.0 nm at 23.6 nm and 45°. These multilayers exhibited excellent stability on annealing at temperatures up to 600°C.

Original languageEnglish (US)
Pages (from-to)1786-1788
Number of pages3
JournalOptics letters
Volume19
Issue number21
DOIs
StatePublished - Nov 1 1994
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Fingerprint

Dive into the research topics of 'Si/B<sub>4</sub>C narrow-bandpass mirrors for the extreme ultraviolet'. Together they form a unique fingerprint.

Cite this