Signal dependence on irradiation geometry of Cd1_xZnxTe detectors for digital X-ray imaging

G. C. Giakos; S. Vedantham; B. Pillai; S. Chowdhury; D. B. Sheffer; A. Dasgupta; R. J. Endorf; A. Passalaqua; S. Kollipara

Signal dependence on irradiation geometry of Cd_{1_x}Zn_xTe detectors for digital X-ray imaging

G. C. Giakos, S. Vedantham, B. Pillai, S. Chowdhury, D. B. Sheffer, A. Dasgupta, R. J. Endorf, A. Passalaqua, S. Kollipara

Research output: Contribution to journal › Article › peer-review

Abstract

CdZnTe is one of the most promising semiconductor material in the field of digital X-ray imaging, and may be operated at room temperature. To improve the detector characteristics, ternary systems such as Cd_{1_x}Zn_xTe were grown by the high pressure Bridgman (HPG) technique. The signal performance characteristics of quasi-resistive Cd_{1_x}Zn_xTe semiconductor detectors, was studied at different directions of irradiation, within the X-ray diagnostic energy range. The experimental results suggest that the total efficiency of these semiconductor detectors depends upon the energy absorption efficiency as well as the charge collection efficiency. This imaging detector allows one to investigate methods to improve the detection and imaging performance parameters as part of the development of an X-ray imaging system.

Original language	English (US)
Pages (from-to)	295-304
Number of pages	10
Journal	Journal of X-Ray Science and Technology
Volume	7
Issue number	3-4
State	Published - Dec 1997
Externally published	Yes

ASJC Scopus subject areas

Radiation
Instrumentation
Radiology Nuclear Medicine and imaging
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Signal dependence on irradiation geometry of Cd_{1_x}Zn_xTe detectors for digital X-ray imaging. / Giakos, G. C.; Vedantham, S.; Pillai, B.; Chowdhury, S.; Sheffer, D. B.; Dasgupta, A.; Endorf, R. J.; Passalaqua, A.; Kollipara, S.

In: Journal of X-Ray Science and Technology, Vol. 7, No. 3-4, 12.1997, p. 295-304.

Research output: Contribution to journal › Article › peer-review

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abstract = "CdZnTe is one of the most promising semiconductor material in the field of digital X-ray imaging, and may be operated at room temperature. To improve the detector characteristics, ternary systems such as Cd1_xZnxTe were grown by the high pressure Bridgman (HPG) technique. The signal performance characteristics of quasi-resistive Cd1_xZnxTe semiconductor detectors, was studied at different directions of irradiation, within the X-ray diagnostic energy range. The experimental results suggest that the total efficiency of these semiconductor detectors depends upon the energy absorption efficiency as well as the charge collection efficiency. This imaging detector allows one to investigate methods to improve the detection and imaging performance parameters as part of the development of an X-ray imaging system.",

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AU - Giakos, G. C.

AU - Vedantham, S.

AU - Pillai, B.

AU - Chowdhury, S.

AU - Sheffer, D. B.

AU - Dasgupta, A.

AU - Endorf, R. J.

AU - Passalaqua, A.

AU - Kollipara, S.

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N2 - CdZnTe is one of the most promising semiconductor material in the field of digital X-ray imaging, and may be operated at room temperature. To improve the detector characteristics, ternary systems such as Cd1_xZnxTe were grown by the high pressure Bridgman (HPG) technique. The signal performance characteristics of quasi-resistive Cd1_xZnxTe semiconductor detectors, was studied at different directions of irradiation, within the X-ray diagnostic energy range. The experimental results suggest that the total efficiency of these semiconductor detectors depends upon the energy absorption efficiency as well as the charge collection efficiency. This imaging detector allows one to investigate methods to improve the detection and imaging performance parameters as part of the development of an X-ray imaging system.

AB - CdZnTe is one of the most promising semiconductor material in the field of digital X-ray imaging, and may be operated at room temperature. To improve the detector characteristics, ternary systems such as Cd1_xZnxTe were grown by the high pressure Bridgman (HPG) technique. The signal performance characteristics of quasi-resistive Cd1_xZnxTe semiconductor detectors, was studied at different directions of irradiation, within the X-ray diagnostic energy range. The experimental results suggest that the total efficiency of these semiconductor detectors depends upon the energy absorption efficiency as well as the charge collection efficiency. This imaging detector allows one to investigate methods to improve the detection and imaging performance parameters as part of the development of an X-ray imaging system.

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Signal dependence on irradiation geometry of Cd_{1_x}Zn_xTe detectors for digital X-ray imaging

Abstract

ASJC Scopus subject areas

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