Signal dependence on irradiation geometry of Cd1_xZnxTe detectors for digital X-ray imaging

G. C. Giakos, S. Vedantham, B. Pillai, S. Chowdhury, D. B. Sheffer, A. Dasgupta, R. J. Endorf, A. Passalaqua, S. Kollipara

Research output: Contribution to journalArticlepeer-review

Abstract

CdZnTe is one of the most promising semiconductor material in the field of digital X-ray imaging, and may be operated at room temperature. To improve the detector characteristics, ternary systems such as Cd1_xZnxTe were grown by the high pressure Bridgman (HPG) technique. The signal performance characteristics of quasi-resistive Cd1_xZnxTe semiconductor detectors, was studied at different directions of irradiation, within the X-ray diagnostic energy range. The experimental results suggest that the total efficiency of these semiconductor detectors depends upon the energy absorption efficiency as well as the charge collection efficiency. This imaging detector allows one to investigate methods to improve the detection and imaging performance parameters as part of the development of an X-ray imaging system.

Original languageEnglish (US)
Pages (from-to)295-304
Number of pages10
JournalJournal of X-Ray Science and Technology
Volume7
Issue number3-4
StatePublished - Dec 1997
Externally publishedYes

ASJC Scopus subject areas

  • Radiation
  • Instrumentation
  • Radiology Nuclear Medicine and imaging
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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