Silicon ccd optimized for near infrared (nir) wavelengths

Gary R. Sims, Fabiola Griffin, Michael P Lesser

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Improvements in silicon CCD sensitivity in the NIR by using thick, high resistivity epitaxy silicon, backside illumination, and antireflection (AR) coatings are discussed. Quantum efficiencies at 900 nm of up to 42% for frontside illuminated devices and 78% backside illuminated and AR coated devices are reported.

Original languageEnglish (US)
Pages (from-to)55-60
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1161
DOIs
StatePublished - Dec 22 1989

Fingerprint

Silicon
Infrared
Wavelength
Antireflection Coating
Infrared radiation
Antireflection coatings
Epitaxy
antireflection coatings
Quantum Efficiency
Resistivity
silicon
Quantum efficiency
Epitaxial growth
Charge coupled devices
wavelengths
epitaxy
quantum efficiency
Illumination
charge coupled devices
Lighting

ASJC Scopus subject areas

  • Applied Mathematics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Silicon ccd optimized for near infrared (nir) wavelengths. / Sims, Gary R.; Griffin, Fabiola; Lesser, Michael P.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 1161, 22.12.1989, p. 55-60.

Research output: Contribution to journalArticle

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