Silicon ccd optimized for near infrared (nir) wavelengths

Gary R. Sims, Fabiola Griffin, Michael P. Lesser

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Improvements in silicon CCD sensitivity in the NIR by using thick, high resistivity epitaxy silicon, backside illumination, and antireflection (AR) coatings are discussed. Quantum efficiencies at 900 nm of up to 42% for frontside illuminated devices and 78% backside illuminated and AR coated devices are reported.

Original languageEnglish (US)
Pages (from-to)55-60
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1161
DOIs
StatePublished - Dec 22 1989

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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