Silicon detector system for high rate EXAFS applications

A. Pullia, H. W. Kraner, D. P. Siddons, Lars R Furenlid, G. Bertuccio

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Abstract

A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications.

Original languageEnglish (US)
Pages (from-to)585-589
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume42
Issue number4 pt 1
Publication statusPublished - Aug 1995
Externally publishedYes

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ASJC Scopus subject areas

  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Pullia, A., Kraner, H. W., Siddons, D. P., Furenlid, L. R., & Bertuccio, G. (1995). Silicon detector system for high rate EXAFS applications. IEEE Transactions on Nuclear Science, 42(4 pt 1), 585-589.