Silicon detector system for high rate EXAFS applications

A. Pullia, H. W. Kraner, D. P. Siddons, Lars R Furenlid, G. Bertuccio

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications.

Original languageEnglish (US)
Pages (from-to)585-589
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume42
Issue number4 pt 1
StatePublished - Aug 1995
Externally publishedYes

Fingerprint

Silicon detectors
X ray absorption
Full width at half maximum
fine structure
detectors
silicon
x rays
Electrons
Silicon
Shot noise
electrons
cooling systems
shot noise
Cooling systems
Detectors
X rays
energy
room temperature
cells

ASJC Scopus subject areas

  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Pullia, A., Kraner, H. W., Siddons, D. P., Furenlid, L. R., & Bertuccio, G. (1995). Silicon detector system for high rate EXAFS applications. IEEE Transactions on Nuclear Science, 42(4 pt 1), 585-589.

Silicon detector system for high rate EXAFS applications. / Pullia, A.; Kraner, H. W.; Siddons, D. P.; Furenlid, Lars R; Bertuccio, G.

In: IEEE Transactions on Nuclear Science, Vol. 42, No. 4 pt 1, 08.1995, p. 585-589.

Research output: Contribution to journalArticle

Pullia, A, Kraner, HW, Siddons, DP, Furenlid, LR & Bertuccio, G 1995, 'Silicon detector system for high rate EXAFS applications', IEEE Transactions on Nuclear Science, vol. 42, no. 4 pt 1, pp. 585-589.
Pullia A, Kraner HW, Siddons DP, Furenlid LR, Bertuccio G. Silicon detector system for high rate EXAFS applications. IEEE Transactions on Nuclear Science. 1995 Aug;42(4 pt 1):585-589.
Pullia, A. ; Kraner, H. W. ; Siddons, D. P. ; Furenlid, Lars R ; Bertuccio, G. / Silicon detector system for high rate EXAFS applications. In: IEEE Transactions on Nuclear Science. 1995 ; Vol. 42, No. 4 pt 1. pp. 585-589.
@article{c9e39507186e434fb36d3aa252d5cc5d,
title = "Silicon detector system for high rate EXAFS applications",
abstract = "A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications.",
author = "A. Pullia and Kraner, {H. W.} and Siddons, {D. P.} and Furenlid, {Lars R} and G. Bertuccio",
year = "1995",
month = "8",
language = "English (US)",
volume = "42",
pages = "585--589",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4 pt 1",

}

TY - JOUR

T1 - Silicon detector system for high rate EXAFS applications

AU - Pullia, A.

AU - Kraner, H. W.

AU - Siddons, D. P.

AU - Furenlid, Lars R

AU - Bertuccio, G.

PY - 1995/8

Y1 - 1995/8

N2 - A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications.

AB - A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications.

UR - http://www.scopus.com/inward/record.url?scp=0029357392&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029357392&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0029357392

VL - 42

SP - 585

EP - 589

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 4 pt 1

ER -