SILICON DIOXIDE AS A HIGH TEMPERATURE STABILIZER FOR SILVER FILMS.

Peter Smith, H. Gurev

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Silver films cannot at present be used as high temperature reflectors because of severe agglomeration in the presence of oxygen at temperatures in excess of 200 degree C. Cr//2O//3, Al//2O//3, SiO//2 and CrO//x were tested for their effectiveness as thin barrier layers, and SiO//2 is the best of those tested. The use of SiO//2 allows the process of hole healing to compete with the normal hole growth process. Hole healing does not last indefinitely but is superseded by a slower rate hole growth process with an activation energy of 49 kcal mol** minus **1. Because of this last mechanism, stabilized silver is less than 1% transmitting after 50 h at 650 degree C in air, whereas bare silver agglomerates to 66% transmittance after only 3 min under the same conditions. Therefore 500 A SiO//2 films can be used as long term stabilizers for silver films in oxygen atmospheres with temperatures of up to 650 degree C.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
PublisherElsevier Sequoia
Pages159-168
Number of pages10
StatePublished - 1977
Externally publishedYes
EventMetall Coat, Proc of the Int Conf - San Francisco, CA, USA
Duration: Mar 28 1977Apr 1 1977

Other

OtherMetall Coat, Proc of the Int Conf
CitySan Francisco, CA, USA
Period3/28/774/1/77

Fingerprint

Silver
Silica
Temperature
Oxygen
Agglomeration
Activation energy
Air

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Smith, P., & Gurev, H. (1977). SILICON DIOXIDE AS A HIGH TEMPERATURE STABILIZER FOR SILVER FILMS. In Unknown Host Publication Title (pp. 159-168). Elsevier Sequoia.

SILICON DIOXIDE AS A HIGH TEMPERATURE STABILIZER FOR SILVER FILMS. / Smith, Peter; Gurev, H.

Unknown Host Publication Title. Elsevier Sequoia, 1977. p. 159-168.

Research output: Chapter in Book/Report/Conference proceedingChapter

Smith, P & Gurev, H 1977, SILICON DIOXIDE AS A HIGH TEMPERATURE STABILIZER FOR SILVER FILMS. in Unknown Host Publication Title. Elsevier Sequoia, pp. 159-168, Metall Coat, Proc of the Int Conf, San Francisco, CA, USA, 3/28/77.
Smith P, Gurev H. SILICON DIOXIDE AS A HIGH TEMPERATURE STABILIZER FOR SILVER FILMS. In Unknown Host Publication Title. Elsevier Sequoia. 1977. p. 159-168
Smith, Peter ; Gurev, H. / SILICON DIOXIDE AS A HIGH TEMPERATURE STABILIZER FOR SILVER FILMS. Unknown Host Publication Title. Elsevier Sequoia, 1977. pp. 159-168
@inbook{ff856d04eea64a5ea62968c08650874d,
title = "SILICON DIOXIDE AS A HIGH TEMPERATURE STABILIZER FOR SILVER FILMS.",
abstract = "Silver films cannot at present be used as high temperature reflectors because of severe agglomeration in the presence of oxygen at temperatures in excess of 200 degree C. Cr//2O//3, Al//2O//3, SiO//2 and CrO//x were tested for their effectiveness as thin barrier layers, and SiO//2 is the best of those tested. The use of SiO//2 allows the process of hole healing to compete with the normal hole growth process. Hole healing does not last indefinitely but is superseded by a slower rate hole growth process with an activation energy of 49 kcal mol** minus **1. Because of this last mechanism, stabilized silver is less than 1{\%} transmitting after 50 h at 650 degree C in air, whereas bare silver agglomerates to 66{\%} transmittance after only 3 min under the same conditions. Therefore 500 A SiO//2 films can be used as long term stabilizers for silver films in oxygen atmospheres with temperatures of up to 650 degree C.",
author = "Peter Smith and H. Gurev",
year = "1977",
language = "English (US)",
pages = "159--168",
booktitle = "Unknown Host Publication Title",
publisher = "Elsevier Sequoia",

}

TY - CHAP

T1 - SILICON DIOXIDE AS A HIGH TEMPERATURE STABILIZER FOR SILVER FILMS.

AU - Smith, Peter

AU - Gurev, H.

PY - 1977

Y1 - 1977

N2 - Silver films cannot at present be used as high temperature reflectors because of severe agglomeration in the presence of oxygen at temperatures in excess of 200 degree C. Cr//2O//3, Al//2O//3, SiO//2 and CrO//x were tested for their effectiveness as thin barrier layers, and SiO//2 is the best of those tested. The use of SiO//2 allows the process of hole healing to compete with the normal hole growth process. Hole healing does not last indefinitely but is superseded by a slower rate hole growth process with an activation energy of 49 kcal mol** minus **1. Because of this last mechanism, stabilized silver is less than 1% transmitting after 50 h at 650 degree C in air, whereas bare silver agglomerates to 66% transmittance after only 3 min under the same conditions. Therefore 500 A SiO//2 films can be used as long term stabilizers for silver films in oxygen atmospheres with temperatures of up to 650 degree C.

AB - Silver films cannot at present be used as high temperature reflectors because of severe agglomeration in the presence of oxygen at temperatures in excess of 200 degree C. Cr//2O//3, Al//2O//3, SiO//2 and CrO//x were tested for their effectiveness as thin barrier layers, and SiO//2 is the best of those tested. The use of SiO//2 allows the process of hole healing to compete with the normal hole growth process. Hole healing does not last indefinitely but is superseded by a slower rate hole growth process with an activation energy of 49 kcal mol** minus **1. Because of this last mechanism, stabilized silver is less than 1% transmitting after 50 h at 650 degree C in air, whereas bare silver agglomerates to 66% transmittance after only 3 min under the same conditions. Therefore 500 A SiO//2 films can be used as long term stabilizers for silver films in oxygen atmospheres with temperatures of up to 650 degree C.

UR - http://www.scopus.com/inward/record.url?scp=0017701953&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0017701953&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0017701953

SP - 159

EP - 168

BT - Unknown Host Publication Title

PB - Elsevier Sequoia

ER -