Silicon dioxide as a high temperature stabilizer for silver films

Peter Smith, H. Gurev

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Silver films cannot at present be used as high temperature reflectors because of severe agglomeration in the presence of oxygen at temperatures in excess of 200 °C. Cr2O3, Al2O3, SiO3 and CrOx were tested for their effectiveness as thin barrier layers, and SiO2 is the best of those tested. The use of SiO2 allows the process of hole healing to compete with the normal hole growth process. Hole healing does not last indefinitely but is superseded by a slower rate hole growth process with an activation energy of 49 kcal mol-1. Because of this last mechanism, stabilized silver is less than 1% transmitting after 50 h at 650 °C in air, whereas bare silver agglomerates to 66% transmittance after only 3 min under the same conditions. Therefore 500 Å SiO2 films can be used as long term stabilizers for silver films in oxygen atmospheres with temperatures of up to 650 °C.

Original languageEnglish (US)
Pages (from-to)159-168
Number of pages10
JournalThin Solid Films
Volume45
Issue number1
DOIs
StatePublished - Aug 15 1977

Fingerprint

Silver
Silicon Dioxide
silver
Silica
silicon dioxide
healing
Oxygen
Temperature
oxygen
barrier layers
agglomeration
reflectors
transmittance
Agglomeration
Activation energy
activation energy
atmospheres
temperature
air
Air

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Silicon dioxide as a high temperature stabilizer for silver films. / Smith, Peter; Gurev, H.

In: Thin Solid Films, Vol. 45, No. 1, 15.08.1977, p. 159-168.

Research output: Contribution to journalArticle

@article{53097701849646dfb88987305f389f02,
title = "Silicon dioxide as a high temperature stabilizer for silver films",
abstract = "Silver films cannot at present be used as high temperature reflectors because of severe agglomeration in the presence of oxygen at temperatures in excess of 200 °C. Cr2O3, Al2O3, SiO3 and CrOx were tested for their effectiveness as thin barrier layers, and SiO2 is the best of those tested. The use of SiO2 allows the process of hole healing to compete with the normal hole growth process. Hole healing does not last indefinitely but is superseded by a slower rate hole growth process with an activation energy of 49 kcal mol-1. Because of this last mechanism, stabilized silver is less than 1{\%} transmitting after 50 h at 650 °C in air, whereas bare silver agglomerates to 66{\%} transmittance after only 3 min under the same conditions. Therefore 500 {\AA} SiO2 films can be used as long term stabilizers for silver films in oxygen atmospheres with temperatures of up to 650 °C.",
author = "Peter Smith and H. Gurev",
year = "1977",
month = "8",
day = "15",
doi = "10.1016/0040-6090(77)90221-8",
language = "English (US)",
volume = "45",
pages = "159--168",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Silicon dioxide as a high temperature stabilizer for silver films

AU - Smith, Peter

AU - Gurev, H.

PY - 1977/8/15

Y1 - 1977/8/15

N2 - Silver films cannot at present be used as high temperature reflectors because of severe agglomeration in the presence of oxygen at temperatures in excess of 200 °C. Cr2O3, Al2O3, SiO3 and CrOx were tested for their effectiveness as thin barrier layers, and SiO2 is the best of those tested. The use of SiO2 allows the process of hole healing to compete with the normal hole growth process. Hole healing does not last indefinitely but is superseded by a slower rate hole growth process with an activation energy of 49 kcal mol-1. Because of this last mechanism, stabilized silver is less than 1% transmitting after 50 h at 650 °C in air, whereas bare silver agglomerates to 66% transmittance after only 3 min under the same conditions. Therefore 500 Å SiO2 films can be used as long term stabilizers for silver films in oxygen atmospheres with temperatures of up to 650 °C.

AB - Silver films cannot at present be used as high temperature reflectors because of severe agglomeration in the presence of oxygen at temperatures in excess of 200 °C. Cr2O3, Al2O3, SiO3 and CrOx were tested for their effectiveness as thin barrier layers, and SiO2 is the best of those tested. The use of SiO2 allows the process of hole healing to compete with the normal hole growth process. Hole healing does not last indefinitely but is superseded by a slower rate hole growth process with an activation energy of 49 kcal mol-1. Because of this last mechanism, stabilized silver is less than 1% transmitting after 50 h at 650 °C in air, whereas bare silver agglomerates to 66% transmittance after only 3 min under the same conditions. Therefore 500 Å SiO2 films can be used as long term stabilizers for silver films in oxygen atmospheres with temperatures of up to 650 °C.

UR - http://www.scopus.com/inward/record.url?scp=49449127240&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49449127240&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(77)90221-8

DO - 10.1016/0040-6090(77)90221-8

M3 - Article

AN - SCOPUS:49449127240

VL - 45

SP - 159

EP - 168

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1

ER -