Simulating silicon photomultiplier response to scintillation light

Abhinav K. Jha, Herman T. Van Dam, Matthew A Kupinski, Eric W Clarkson

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The response of a Silicon Photomultiplier (SiPM) to optical signals is affected by many factors including photon-detection efficiency, recovery time, gain, optical crosstalk, afterpulsing, dark count, and detector dead time. Many of these parameters vary with overvoltage and temperature. When used to detect scintillation light, there is a complicated non-linear relationship between the incident light and the response of the SiPM. In this paper, we propose a combined discrete-time discrete-event Monte Carlo (MC) model to simulate SiPM response to scintillation light pulses. Our MC model accounts for all relevant aspects of the SiPM response, some of which were not accounted for in the previous models. We also derive and validate analytic expressions for the single-photoelectron response of the SiPM and the voltage drop across the quenching resistance in the SiPM microcell. These analytic expressions consider the effect of all the circuit elements in the SiPM and accurately simulate the time-variation in overvoltage across the microcells of the SiPM. Consequently, our MC model is able to incorporate the variation of the different SiPM parameters with varying overvoltage. The MC model is compared with measurements on SiPM-based scintillation detectors and with some cases for which the response is known a priori. The model is also used to study the variation in SiPM behavior with SiPM-circuit parameter variations and to predict the response of a SiPM-based detector to various scintillators.

Original languageEnglish (US)
Article number6423840
Pages (from-to)336-351
Number of pages16
JournalIEEE Transactions on Nuclear Science
Volume60
Issue number1
DOIs
StatePublished - 2013

Fingerprint

Photomultipliers
Scintillation
scintillation
Silicon
silicon
overvoltage
detectors
Detectors
Optical gain
Scintillation counters
Networks (circuits)
Crosstalk
Photoelectrons
crosstalk
Phosphors
scintillation counters
optical communication
Quenching
photoelectrons
Photons

Keywords

  • Circuit transient analysis
  • electrical characteristics
  • Monte Carlo model
  • silicon photomultiplier
  • single-photoelectron response

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Cite this

Simulating silicon photomultiplier response to scintillation light. / Jha, Abhinav K.; Van Dam, Herman T.; Kupinski, Matthew A; Clarkson, Eric W.

In: IEEE Transactions on Nuclear Science, Vol. 60, No. 1, 6423840, 2013, p. 336-351.

Research output: Contribution to journalArticle

@article{2bd08ecefd834551b27e91164800311c,
title = "Simulating silicon photomultiplier response to scintillation light",
abstract = "The response of a Silicon Photomultiplier (SiPM) to optical signals is affected by many factors including photon-detection efficiency, recovery time, gain, optical crosstalk, afterpulsing, dark count, and detector dead time. Many of these parameters vary with overvoltage and temperature. When used to detect scintillation light, there is a complicated non-linear relationship between the incident light and the response of the SiPM. In this paper, we propose a combined discrete-time discrete-event Monte Carlo (MC) model to simulate SiPM response to scintillation light pulses. Our MC model accounts for all relevant aspects of the SiPM response, some of which were not accounted for in the previous models. We also derive and validate analytic expressions for the single-photoelectron response of the SiPM and the voltage drop across the quenching resistance in the SiPM microcell. These analytic expressions consider the effect of all the circuit elements in the SiPM and accurately simulate the time-variation in overvoltage across the microcells of the SiPM. Consequently, our MC model is able to incorporate the variation of the different SiPM parameters with varying overvoltage. The MC model is compared with measurements on SiPM-based scintillation detectors and with some cases for which the response is known a priori. The model is also used to study the variation in SiPM behavior with SiPM-circuit parameter variations and to predict the response of a SiPM-based detector to various scintillators.",
keywords = "Circuit transient analysis, electrical characteristics, Monte Carlo model, silicon photomultiplier, single-photoelectron response",
author = "Jha, {Abhinav K.} and {Van Dam}, {Herman T.} and Kupinski, {Matthew A} and Clarkson, {Eric W}",
year = "2013",
doi = "10.1109/TNS.2012.2234135",
language = "English (US)",
volume = "60",
pages = "336--351",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

TY - JOUR

T1 - Simulating silicon photomultiplier response to scintillation light

AU - Jha, Abhinav K.

AU - Van Dam, Herman T.

AU - Kupinski, Matthew A

AU - Clarkson, Eric W

PY - 2013

Y1 - 2013

N2 - The response of a Silicon Photomultiplier (SiPM) to optical signals is affected by many factors including photon-detection efficiency, recovery time, gain, optical crosstalk, afterpulsing, dark count, and detector dead time. Many of these parameters vary with overvoltage and temperature. When used to detect scintillation light, there is a complicated non-linear relationship between the incident light and the response of the SiPM. In this paper, we propose a combined discrete-time discrete-event Monte Carlo (MC) model to simulate SiPM response to scintillation light pulses. Our MC model accounts for all relevant aspects of the SiPM response, some of which were not accounted for in the previous models. We also derive and validate analytic expressions for the single-photoelectron response of the SiPM and the voltage drop across the quenching resistance in the SiPM microcell. These analytic expressions consider the effect of all the circuit elements in the SiPM and accurately simulate the time-variation in overvoltage across the microcells of the SiPM. Consequently, our MC model is able to incorporate the variation of the different SiPM parameters with varying overvoltage. The MC model is compared with measurements on SiPM-based scintillation detectors and with some cases for which the response is known a priori. The model is also used to study the variation in SiPM behavior with SiPM-circuit parameter variations and to predict the response of a SiPM-based detector to various scintillators.

AB - The response of a Silicon Photomultiplier (SiPM) to optical signals is affected by many factors including photon-detection efficiency, recovery time, gain, optical crosstalk, afterpulsing, dark count, and detector dead time. Many of these parameters vary with overvoltage and temperature. When used to detect scintillation light, there is a complicated non-linear relationship between the incident light and the response of the SiPM. In this paper, we propose a combined discrete-time discrete-event Monte Carlo (MC) model to simulate SiPM response to scintillation light pulses. Our MC model accounts for all relevant aspects of the SiPM response, some of which were not accounted for in the previous models. We also derive and validate analytic expressions for the single-photoelectron response of the SiPM and the voltage drop across the quenching resistance in the SiPM microcell. These analytic expressions consider the effect of all the circuit elements in the SiPM and accurately simulate the time-variation in overvoltage across the microcells of the SiPM. Consequently, our MC model is able to incorporate the variation of the different SiPM parameters with varying overvoltage. The MC model is compared with measurements on SiPM-based scintillation detectors and with some cases for which the response is known a priori. The model is also used to study the variation in SiPM behavior with SiPM-circuit parameter variations and to predict the response of a SiPM-based detector to various scintillators.

KW - Circuit transient analysis

KW - electrical characteristics

KW - Monte Carlo model

KW - silicon photomultiplier

KW - single-photoelectron response

UR - http://www.scopus.com/inward/record.url?scp=84873716555&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873716555&partnerID=8YFLogxK

U2 - 10.1109/TNS.2012.2234135

DO - 10.1109/TNS.2012.2234135

M3 - Article

VL - 60

SP - 336

EP - 351

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 1

M1 - 6423840

ER -