Simulation and design of nanocircuits with resonant tunneling devices

Janet Meiling Wang, Bharat Sukhwani, Uday Padmanabhan, Dongsheng Ma, Kartik Sinha

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

New nanotechnology-based devices are being researched to replace CMOS devices in order to overcome CMOS technology's scaling limitations. However, many such devices exhibit nonmonotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance. This paper proposes two new circuit simulation approaches that can effectively simulate nanotechnology devices with uncertain input sources and negative differential resistance problem. A new tool called NanoSim-RTD is developed based on the proposed new simulation techniques. The experimental results show a speedup of 1.48-37.1 times when compared with existing simulators. Further, this paper demonstrates a new way to design delay-insensitive nanocircuits, and the designs can be verified by using NanoSim-RTD.

Original languageEnglish (US)
Pages (from-to)1293-1304
Number of pages12
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Volume54
Issue number6
DOIs
StatePublished - Jun 1 2007

Keywords

  • Asynchronous
  • Bias-based
  • Resonant tunneling devices
  • Stepwise equivalent conductance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Simulation and design of nanocircuits with resonant tunneling devices'. Together they form a unique fingerprint.

  • Cite this