Thin film metallic conductors or interconnects are subjected to increasingly high current densities as the feature sizes decrease that can lead to failure of interconnects in moderately short times. Modelling of failure in micro electronic materials involves several challenges such as electro-migration and stress driven diffusion. These physical phenomena are usually negligible in conventional applications. However, the material within an interconnect is subjected to severe thermal-mechanical and electrical loading. In this study, the peridynamic (PD) framework is applied to model the electro-migration process by coupling physical fields of mechanical deformation, heat transfer, electrical potential distribution, and vacancy diffusion simultaneously.