Simulation of electro-migration through peridynamics

Selda Oterkus, John Fox, Erdogan Madenci

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Scopus citations

Abstract

Thin film metallic conductors or interconnects are subjected to increasingly high current densities as the feature sizes decrease that can lead to failure of interconnects in moderately short times. Modelling of failure in micro electronic materials involves several challenges such as electro-migration and stress driven diffusion. These physical phenomena are usually negligible in conventional applications. However, the material within an interconnect is subjected to severe thermal-mechanical and electrical loading. In this study, the peridynamic (PD) framework is applied to model the electro-migration process by coupling physical fields of mechanical deformation, heat transfer, electrical potential distribution, and vacancy diffusion simultaneously.

Original languageEnglish (US)
Title of host publication2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
Pages1488-1493
Number of pages6
DOIs
StatePublished - Sep 9 2013
Event2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 - Las Vegas, NV, United States
Duration: May 28 2013May 31 2013

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Other

Other2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
CountryUnited States
CityLas Vegas, NV
Period5/28/135/31/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Oterkus, S., Fox, J., & Madenci, E. (2013). Simulation of electro-migration through peridynamics. In 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013 (pp. 1488-1493). [6575768] (Proceedings - Electronic Components and Technology Conference). https://doi.org/10.1109/ECTC.2013.6575768