Single-crystal Si formed on amorphous substrate at low temperature by nanopatterning and nickel-induced lateral crystallization

Jian Gu, Stephen Y. Chou, Nan Yao, Henny Zandbergen, Jeffrey K. Farrer

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Single-crystal silicon has been achieved by patterning amorphous silicon film on silicon dioxide substrate into nanoscale lines and nickel-induced lateral crystallization. Line width affects the single-crystal silicon formation significantly. Narrow line widths, 30 nm or less, resulted in little lateral crystallization; while for line widths above 250 nm, multiple grains started to form. In-situ transmission electron microscope observation has been used to study the crystallization process. Lithography-constrained single seeding is proposed to explain the single-crystal formation.

Original languageEnglish (US)
Pages (from-to)1104-1106
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number6
DOIs
StatePublished - Aug 5 2002
Externally publishedYes

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nickel
crystallization
single crystals
silicon
inoculation
silicon films
amorphous silicon
lithography
electron microscopes
silicon dioxide

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Single-crystal Si formed on amorphous substrate at low temperature by nanopatterning and nickel-induced lateral crystallization. / Gu, Jian; Chou, Stephen Y.; Yao, Nan; Zandbergen, Henny; Farrer, Jeffrey K.

In: Applied Physics Letters, Vol. 81, No. 6, 05.08.2002, p. 1104-1106.

Research output: Contribution to journalArticle

Gu, Jian ; Chou, Stephen Y. ; Yao, Nan ; Zandbergen, Henny ; Farrer, Jeffrey K. / Single-crystal Si formed on amorphous substrate at low temperature by nanopatterning and nickel-induced lateral crystallization. In: Applied Physics Letters. 2002 ; Vol. 81, No. 6. pp. 1104-1106.
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