The Nonlinear Control Strategies of Tucson has won a Phase II STTR award from the U.S. Air Force to provide an enabling commercial software in optimizing epi structure in a single wafer growth. The practice in semiconductor materials growth has typically involved an estimation of the absorption-band edge via simple band-structure calculations followed by series of growth, packaging, and regrowth cycles. This problem has been addressed by demonstrating the ability to predict a semiconductor- laser input-output (L-I) characteristic based on fundamental principles without using adjustable fit parameters problem. The spectral lineshape at low external light illumination intensities yields photoluminescence (PL) spectra that provide invaluable feedback to the semiconductor-wafer grower on growth accuracy and quality. The predicted laser input-output characteristics were computed prior to the experimental measurement when a slight temperature elevation in the active region was allowed for.
|Original language||English (US)|
|Number of pages||5|
|Journal||Laser Focus World|
|Publication status||Published - Jul 2007|
ASJC Scopus subject areas
- Electrical and Electronic Engineering