Sol-gel derived bismuth titanate thin films with c-axis orientation

J. T. Dawley, R. Radspinner, B. J J Zelinski, Donald R Uhlmann

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Bismuth titanate (Bi4Ti3O12), a member of the layered perovskite family, has a unique set of ferroelectric properties, which include a high remanent polarization, low coercive field, and high Curie temperature, that make it a possible candidate for data storage applications. For this investigation, bismuth titanate, or BiT, films were fabricated via sol-gel method to examine the effect of processing on phase development and orientation. Solutions were deposited onto platinized silicon, and then heat treated for one hour at temperatures ranging from 550°C to 700°C in 100% O2. It was found that c-axis oriented BiT films could be formed at temperatures as low as 550°C by using bismuth oxide template layers, while films without bismuth oxide templating possessed a random orientation over the same temperature range.

Original languageEnglish (US)
Pages (from-to)85-93
Number of pages9
JournalJournal of Sol-Gel Science and Technology
Volume20
Issue number1
DOIs
StatePublished - Jan 2001

Fingerprint

Bismuth
bismuth
Sol-gels
bismuth oxides
gels
Thin films
thin films
Remanence
Silicon
data storage
Curie temperature
Temperature
Sol-gel process
Ferroelectric materials
Oxides
temperature
templates
Perovskite
Data storage equipment
heat

Keywords

  • Bismuth titanate
  • Films
  • Orientation
  • Templating

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Sol-gel derived bismuth titanate thin films with c-axis orientation. / Dawley, J. T.; Radspinner, R.; Zelinski, B. J J; Uhlmann, Donald R.

In: Journal of Sol-Gel Science and Technology, Vol. 20, No. 1, 01.2001, p. 85-93.

Research output: Contribution to journalArticle

Dawley, J. T. ; Radspinner, R. ; Zelinski, B. J J ; Uhlmann, Donald R. / Sol-gel derived bismuth titanate thin films with c-axis orientation. In: Journal of Sol-Gel Science and Technology. 2001 ; Vol. 20, No. 1. pp. 85-93.
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