Sol-gel derived bismuth titanate thin films with c-axis orientation

J. T. Dawley, R. Radspinner, B. J.J. Zelinski, D. R. Uhlmann

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

Bismuth titanate (Bi4Ti3O12), a member of the layered perovskite family, has a unique set of ferroelectric properties, which include a high remanent polarization, low coercive field, and high Curie temperature, that make it a possible candidate for data storage applications. For this investigation, bismuth titanate, or BiT, films were fabricated via sol-gel method to examine the effect of processing on phase development and orientation. Solutions were deposited onto platinized silicon, and then heat treated for one hour at temperatures ranging from 550°C to 700°C in 100% O2. It was found that c-axis oriented BiT films could be formed at temperatures as low as 550°C by using bismuth oxide template layers, while films without bismuth oxide templating possessed a random orientation over the same temperature range.

Original languageEnglish (US)
Article number318555
Pages (from-to)85-93
Number of pages9
JournalJournal of Sol-Gel Science and Technology
Volume20
Issue number1
DOIs
StatePublished - Jan 1 2001

Keywords

  • Bismuth titanate
  • Films
  • Orientation
  • Templating

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Materials Chemistry

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