Sol-gel derived ferroelectric YMnO3 films

G. Teowee, K. C. McCarthy, F. S. McCarthy, B. H. Dietz, D. G. Davis, D. R. Uhlmann

Research output: Contribution to journalConference article

Abstract

Sol-gel derived YMnO3 films have been prepared on platinized Si wafers. Crystallization took place at firing temperatures above about 750 C. The crystallized films were very conductive. YMnO3 films exhibited a dielectric constant of 23, a remanent polarization of 1.0 μC/cm2 and a coercive field of 12 kV/cm, all measured at -33 C. The FE loop was lossy and elliptical at room temperature but became more distinct at lower measuring temperatures or at higher measuring frequencies.

Original languageEnglish (US)
Pages (from-to)327-332
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume495
StatePublished - Jan 1 1998
Externally publishedYes
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 30 1997Dec 4 1997

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Teowee, G., McCarthy, K. C., McCarthy, F. S., Dietz, B. H., Davis, D. G., & Uhlmann, D. R. (1998). Sol-gel derived ferroelectric YMnO3 films. Materials Research Society Symposium - Proceedings, 495, 327-332.