Sol-gel derived ferroelectric YMnO3 films

G. Teowee, K. C. McCarthy, F. S. McCarthy, B. H. Dietz, D. G. Davis, Donald R Uhlmann

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Sol-gel derived YMnO3 films have been prepared on platinized Si wafers. Crystallization took place at firing temperatures above about 750 C. The crystallized films were very conductive. YMnO3 films exhibited a dielectric constant of 23, a remanent polarization of 1.0 μC/cm2 and a coercive field of 12 kV/cm, all measured at -33 C. The FE loop was lossy and elliptical at room temperature but became more distinct at lower measuring temperatures or at higher measuring frequencies.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMRS
Pages327-332
Number of pages6
Volume495
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 30 1997Dec 4 1997

Other

OtherProceedings of the 1997 MRS Fall Meeting
CityBoston, MA, USA
Period11/30/9712/4/97

Fingerprint

Ferroelectric films
Sol-gels
Remanence
Crystallization
Temperature
Permittivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Teowee, G., McCarthy, K. C., McCarthy, F. S., Dietz, B. H., Davis, D. G., & Uhlmann, D. R. (1998). Sol-gel derived ferroelectric YMnO3 films. In Materials Research Society Symposium - Proceedings (Vol. 495, pp. 327-332). MRS.

Sol-gel derived ferroelectric YMnO3 films. / Teowee, G.; McCarthy, K. C.; McCarthy, F. S.; Dietz, B. H.; Davis, D. G.; Uhlmann, Donald R.

Materials Research Society Symposium - Proceedings. Vol. 495 MRS, 1998. p. 327-332.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Teowee, G, McCarthy, KC, McCarthy, FS, Dietz, BH, Davis, DG & Uhlmann, DR 1998, Sol-gel derived ferroelectric YMnO3 films. in Materials Research Society Symposium - Proceedings. vol. 495, MRS, pp. 327-332, Proceedings of the 1997 MRS Fall Meeting, Boston, MA, USA, 11/30/97.
Teowee G, McCarthy KC, McCarthy FS, Dietz BH, Davis DG, Uhlmann DR. Sol-gel derived ferroelectric YMnO3 films. In Materials Research Society Symposium - Proceedings. Vol. 495. MRS. 1998. p. 327-332
Teowee, G. ; McCarthy, K. C. ; McCarthy, F. S. ; Dietz, B. H. ; Davis, D. G. ; Uhlmann, Donald R. / Sol-gel derived ferroelectric YMnO3 films. Materials Research Society Symposium - Proceedings. Vol. 495 MRS, 1998. pp. 327-332
@inproceedings{22eeeee5c6fb4b2c9db310c37d1c9935,
title = "Sol-gel derived ferroelectric YMnO3 films",
abstract = "Sol-gel derived YMnO3 films have been prepared on platinized Si wafers. Crystallization took place at firing temperatures above about 750 C. The crystallized films were very conductive. YMnO3 films exhibited a dielectric constant of 23, a remanent polarization of 1.0 μC/cm2 and a coercive field of 12 kV/cm, all measured at -33 C. The FE loop was lossy and elliptical at room temperature but became more distinct at lower measuring temperatures or at higher measuring frequencies.",
author = "G. Teowee and McCarthy, {K. C.} and McCarthy, {F. S.} and Dietz, {B. H.} and Davis, {D. G.} and Uhlmann, {Donald R}",
year = "1998",
language = "English (US)",
volume = "495",
pages = "327--332",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "MRS",

}

TY - GEN

T1 - Sol-gel derived ferroelectric YMnO3 films

AU - Teowee, G.

AU - McCarthy, K. C.

AU - McCarthy, F. S.

AU - Dietz, B. H.

AU - Davis, D. G.

AU - Uhlmann, Donald R

PY - 1998

Y1 - 1998

N2 - Sol-gel derived YMnO3 films have been prepared on platinized Si wafers. Crystallization took place at firing temperatures above about 750 C. The crystallized films were very conductive. YMnO3 films exhibited a dielectric constant of 23, a remanent polarization of 1.0 μC/cm2 and a coercive field of 12 kV/cm, all measured at -33 C. The FE loop was lossy and elliptical at room temperature but became more distinct at lower measuring temperatures or at higher measuring frequencies.

AB - Sol-gel derived YMnO3 films have been prepared on platinized Si wafers. Crystallization took place at firing temperatures above about 750 C. The crystallized films were very conductive. YMnO3 films exhibited a dielectric constant of 23, a remanent polarization of 1.0 μC/cm2 and a coercive field of 12 kV/cm, all measured at -33 C. The FE loop was lossy and elliptical at room temperature but became more distinct at lower measuring temperatures or at higher measuring frequencies.

UR - http://www.scopus.com/inward/record.url?scp=0031631617&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031631617&partnerID=8YFLogxK

M3 - Conference contribution

VL - 495

SP - 327

EP - 332

BT - Materials Research Society Symposium - Proceedings

PB - MRS

ER -