Sol-gel derived Pb(Zn1/3Nb2/3)O3-PbTiO3 thin films

G. Teowee, K. C. McCarthy, F. S. McCarthy, D. G. Davis, J. T. Dawley, B. J.J. Zelinski, D. R. Uhlmann

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

A series of sol-gel derived Pb(Zn1/3Nb2/3)O3-PbTiO3 (PZN-PT) films, with various PbTiO3 contents, have been prepared on platinized Si wafers. The (1-x)PZN - xPT films fired to 700C became single phase perovskite for x ≥ 0.7. In the PZN-0.1PT films, the films still contain pyrochlore phase at a firing temperature of 850C; the perovskite phase appeared at a firing temperature of 800C. The dielectric constant increased with increasing PT content, with a peak in dielectric constant at x = 0.8. PZN-PT films with x = 0.8 exhibited dielectric constant, dissipation factor, remanent polarization and coercive field values of 600, 0.10,6 and 45 kV/cm respectively.

Original languageEnglish (US)
Pages (from-to)445-450
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume493
StatePublished - Jan 1 1998
Externally publishedYes
EventProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 30 1997Dec 4 1997

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Teowee, G., McCarthy, K. C., McCarthy, F. S., Davis, D. G., Dawley, J. T., Zelinski, B. J. J., & Uhlmann, D. R. (1998). Sol-gel derived Pb(Zn1/3Nb2/3)O3-PbTiO3 thin films. Materials Research Society Symposium - Proceedings, 493, 445-450.