Sol-gel derived Pb(Zn1/3Nb2/3)O3-PbTiO3 thin films

G. Teowee, K. C. McCarthy, F. S. McCarthy, D. G. Davis, J. T. Dawley, B. J J Zelinski, Donald R Uhlmann

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A series of sol-gel derived Pb(Zn1/3Nb2/3)O3-PbTiO3 (PZN-PT) films, with various PbTiO3 contents, have been prepared on platinized Si wafers. The (1-x)PZN - xPT films fired to 700C became single phase perovskite for x ≥ 0.7. In the PZN-0.1PT films, the films still contain pyrochlore phase at a firing temperature of 850C; the perovskite phase appeared at a firing temperature of 800C. The dielectric constant increased with increasing PT content, with a peak in dielectric constant at x = 0.8. PZN-PT films with x = 0.8 exhibited dielectric constant, dissipation factor, remanent polarization and coercive field values of 600, 0.10,6 and 45 kV/cm respectively.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMRS
Pages445-450
Number of pages6
Volume493
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 30 1997Dec 4 1997

Other

OtherProceedings of the 1997 MRS Fall Symposium
CityBoston, MA, USA
Period11/30/9712/4/97

Fingerprint

Sol-gels
Thin films
Permittivity
Perovskite
Remanence
Temperature
perovskite

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Teowee, G., McCarthy, K. C., McCarthy, F. S., Davis, D. G., Dawley, J. T., Zelinski, B. J. J., & Uhlmann, D. R. (1998). Sol-gel derived Pb(Zn1/3Nb2/3)O3-PbTiO3 thin films. In Materials Research Society Symposium - Proceedings (Vol. 493, pp. 445-450). MRS.

Sol-gel derived Pb(Zn1/3Nb2/3)O3-PbTiO3 thin films. / Teowee, G.; McCarthy, K. C.; McCarthy, F. S.; Davis, D. G.; Dawley, J. T.; Zelinski, B. J J; Uhlmann, Donald R.

Materials Research Society Symposium - Proceedings. Vol. 493 MRS, 1998. p. 445-450.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Teowee, G, McCarthy, KC, McCarthy, FS, Davis, DG, Dawley, JT, Zelinski, BJJ & Uhlmann, DR 1998, Sol-gel derived Pb(Zn1/3Nb2/3)O3-PbTiO3 thin films. in Materials Research Society Symposium - Proceedings. vol. 493, MRS, pp. 445-450, Proceedings of the 1997 MRS Fall Symposium, Boston, MA, USA, 11/30/97.
Teowee G, McCarthy KC, McCarthy FS, Davis DG, Dawley JT, Zelinski BJJ et al. Sol-gel derived Pb(Zn1/3Nb2/3)O3-PbTiO3 thin films. In Materials Research Society Symposium - Proceedings. Vol. 493. MRS. 1998. p. 445-450
Teowee, G. ; McCarthy, K. C. ; McCarthy, F. S. ; Davis, D. G. ; Dawley, J. T. ; Zelinski, B. J J ; Uhlmann, Donald R. / Sol-gel derived Pb(Zn1/3Nb2/3)O3-PbTiO3 thin films. Materials Research Society Symposium - Proceedings. Vol. 493 MRS, 1998. pp. 445-450
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AB - A series of sol-gel derived Pb(Zn1/3Nb2/3)O3-PbTiO3 (PZN-PT) films, with various PbTiO3 contents, have been prepared on platinized Si wafers. The (1-x)PZN - xPT films fired to 700C became single phase perovskite for x ≥ 0.7. In the PZN-0.1PT films, the films still contain pyrochlore phase at a firing temperature of 850C; the perovskite phase appeared at a firing temperature of 800C. The dielectric constant increased with increasing PT content, with a peak in dielectric constant at x = 0.8. PZN-PT films with x = 0.8 exhibited dielectric constant, dissipation factor, remanent polarization and coercive field values of 600, 0.10,6 and 45 kV/cm respectively.

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