Sol-gel derived RuO2-PZT-RuO2 ferroelectric capacitors

G. Teowee, J. M. Boulton, S. Hassan, K. McCarthy, F. McCarthy, T. J. Bukowski, T. P. Alexander, Donald R Uhlmann

Research output: Chapter in Book/Report/Conference proceedingChapter

6 Citations (Scopus)

Abstract

There has been a lot of attention on novel oxide electrodes, e.g., RuO2, LaSrCoO3, YBCO, for contacts to ferroelectric capacitors. Such devices were reported to yield fatigue-free behaviors which are crucial for implementation in ferroelectric memory technology. Typical Pt/PZT/Pt capacitors fatigue as fast as after 104 cycles. In this study, sol-gel techniques are used to prepare both conducting RuO2 and PZT 53/47 thin films. Conductivity of the RuO2 films ranged was measured as 5 × 10-4 Ω-cm. Oxidized Si and platinized Si wafers were used as the substrates; Si/ SiO2/RuO2/PZT/RuO2 and Si/SiO2/Pt/RuO2/PZT/RuO2/Pt and Si/SiO2/Pt/PZT/Pt capacitors were obtained. The effect of RuO2 electrode on microstructure, ferroelectric properties and leakage characteristics will be discussed.

Original languageEnglish (US)
Title of host publicationIntegrated Ferroelectrics
Pages287-295
Number of pages9
Volume18
Edition1-4
StatePublished - 1998

Fingerprint

Ferroelectric materials
Sol-gels
capacitors
Capacitors
gels
Fatigue of materials
Electrodes
electrodes
Oxides
leakage
wafers
Data storage equipment
conduction
Thin films
conductivity
microstructure
Microstructure
cycles
oxides
Substrates

Keywords

  • Fatigue
  • Ferroelectric capacitors
  • PZT 53/47
  • RuO films

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

Teowee, G., Boulton, J. M., Hassan, S., McCarthy, K., McCarthy, F., Bukowski, T. J., ... Uhlmann, D. R. (1998). Sol-gel derived RuO2-PZT-RuO2 ferroelectric capacitors. In Integrated Ferroelectrics (1-4 ed., Vol. 18, pp. 287-295)

Sol-gel derived RuO2-PZT-RuO2 ferroelectric capacitors. / Teowee, G.; Boulton, J. M.; Hassan, S.; McCarthy, K.; McCarthy, F.; Bukowski, T. J.; Alexander, T. P.; Uhlmann, Donald R.

Integrated Ferroelectrics. Vol. 18 1-4. ed. 1998. p. 287-295.

Research output: Chapter in Book/Report/Conference proceedingChapter

Teowee, G, Boulton, JM, Hassan, S, McCarthy, K, McCarthy, F, Bukowski, TJ, Alexander, TP & Uhlmann, DR 1998, Sol-gel derived RuO2-PZT-RuO2 ferroelectric capacitors. in Integrated Ferroelectrics. 1-4 edn, vol. 18, pp. 287-295.
Teowee G, Boulton JM, Hassan S, McCarthy K, McCarthy F, Bukowski TJ et al. Sol-gel derived RuO2-PZT-RuO2 ferroelectric capacitors. In Integrated Ferroelectrics. 1-4 ed. Vol. 18. 1998. p. 287-295
Teowee, G. ; Boulton, J. M. ; Hassan, S. ; McCarthy, K. ; McCarthy, F. ; Bukowski, T. J. ; Alexander, T. P. ; Uhlmann, Donald R. / Sol-gel derived RuO2-PZT-RuO2 ferroelectric capacitors. Integrated Ferroelectrics. Vol. 18 1-4. ed. 1998. pp. 287-295
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AU - Hassan, S.

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AU - McCarthy, F.

AU - Bukowski, T. J.

AU - Alexander, T. P.

AU - Uhlmann, Donald R

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AB - There has been a lot of attention on novel oxide electrodes, e.g., RuO2, LaSrCoO3, YBCO, for contacts to ferroelectric capacitors. Such devices were reported to yield fatigue-free behaviors which are crucial for implementation in ferroelectric memory technology. Typical Pt/PZT/Pt capacitors fatigue as fast as after 104 cycles. In this study, sol-gel techniques are used to prepare both conducting RuO2 and PZT 53/47 thin films. Conductivity of the RuO2 films ranged was measured as 5 × 10-4 Ω-cm. Oxidized Si and platinized Si wafers were used as the substrates; Si/ SiO2/RuO2/PZT/RuO2 and Si/SiO2/Pt/RuO2/PZT/RuO2/Pt and Si/SiO2/Pt/PZT/Pt capacitors were obtained. The effect of RuO2 electrode on microstructure, ferroelectric properties and leakage characteristics will be discussed.

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