Sol-gel derived RuO2-PZT-RuO2 ferroelectric capacitors

G. Teowee, J. M. Boulton, S. Hassan, K. McCarthy, F. McCarthy, T. J. Bukowski, T. P. Alexander, D. R. Uhlmann

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

There has been a lot of attention on novel oxide electrodes, e.g., RuO2, LaSrCoO3, YBCO, for contacts to ferroelectric capacitors. Such devices were reported to yield fatigue-free behaviors which are crucial for implementation in ferroelectric memory technology. Typical Pt/PZT/Pt capacitors fatigue as fast as after 104 cycles. In this study, sol-gel techniques are used to prepare both conducting RuO2 and PZT 53/47 thin films. Conductivity of the RuO2 films ranged was measured as 5 × 10-4 Ω-cm. Oxidized Si and platinized Si wafers were used as the substrates; Si/ SiO2/RuO2/PZT/RuO2 and Si/SiO2/Pt/RuO2/PZT/RuO2/Pt and Si/SiO2/Pt/PZT/Pt capacitors were obtained. The effect of RuO2 electrode on microstructure, ferroelectric properties and leakage characteristics will be discussed.

Original languageEnglish (US)
Pages (from-to)287-295
Number of pages9
JournalIntegrated Ferroelectrics
Volume18
Issue number1-4
StatePublished - Dec 1 1998

Keywords

  • Fatigue
  • Ferroelectric capacitors
  • PZT 53/47
  • RuO films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Teowee, G., Boulton, J. M., Hassan, S., McCarthy, K., McCarthy, F., Bukowski, T. J., Alexander, T. P., & Uhlmann, D. R. (1998). Sol-gel derived RuO2-PZT-RuO2 ferroelectric capacitors. Integrated Ferroelectrics, 18(1-4), 287-295.