Spatiotemporal dynamics of broad-area semiconductor lasers

Research output: Contribution to conferencePaper

Abstract

We present a microscopic model for describing the spatiotemporal dynamics of semiconductor lasers. On the basis of the free-carrier Maxwell-Bloch equations in relaxation-time approximation, the dynamics of the polarization are explicitly considered. In structure, the model can be interpreted as an extension of spatially dependent two-level Maxwell-Bloch model systems to specifically adopt to the semiconductor gain medium with its continuum of states. The explicit consideration of the spatiotemporal dynamics of the polarization, together with the carrier density and the counterpropagating optical fields, has the advantage to naturally include in the theory and the numerical modeling (1) nonlinear gain-enhancement and saturation effects, (2) frequency dependence and spectral properties, and (3) nonlinear dispersion and absorption.

Original languageEnglish (US)
Pages6-7
Number of pages2
StatePublished - Dec 1 1994
EventProceedings of the 5th European Quantum Electronics Conference - Amsterdam, Neth
Duration: Aug 28 1994Sep 2 1994

Other

OtherProceedings of the 5th European Quantum Electronics Conference
CityAmsterdam, Neth
Period8/28/949/2/94

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hess, O., Koch, S. W., & Moloney, J. V. (1994). Spatiotemporal dynamics of broad-area semiconductor lasers. 6-7. Paper presented at Proceedings of the 5th European Quantum Electronics Conference, Amsterdam, Neth, .