Spatiotemporal dynamics of broad-area semiconductor lasers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a microscopic model for describing the spatiotemporal dynamics of semiconductor lasers. On the basis of the free-carrier Maxwell-Bloch equations in relaxation-time approximation, the dynamics of the polarization are explicitly considered. In structure, the model can be interpreted as an extension of spatially dependent two-level Maxwell-Bloch model systems to specifically adopt to the semiconductor gain medium with its continuum of states. The explicit consideration of the spatiotemporal dynamics of the polarization, together with the carrier density and the counterpropagating optical fields, has the advantage to naturally include in the theory and the numerical modeling (1) nonlinear gain-enhancement and saturation effects, (2) frequency dependence and spectral properties, and (3) nonlinear dispersion and absorption.

Original languageEnglish (US)
Title of host publicationEuropean Quantum Electronics Conference - Technical Digest
PublisherIEEE
Pages6-7
Number of pages2
StatePublished - 1994
Externally publishedYes
EventProceedings of the 5th European Quantum Electronics Conference - Amsterdam, Neth
Duration: Aug 28 1994Sep 2 1994

Other

OtherProceedings of the 5th European Quantum Electronics Conference
CityAmsterdam, Neth
Period8/28/949/2/94

Fingerprint

Semiconductor lasers
Polarization
Maxwell equations
Relaxation time
Carrier concentration
Semiconductor materials

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hess, O., Koch, S. W., & Moloney, J. V. (1994). Spatiotemporal dynamics of broad-area semiconductor lasers. In European Quantum Electronics Conference - Technical Digest (pp. 6-7). IEEE.

Spatiotemporal dynamics of broad-area semiconductor lasers. / Hess, Ortwin; Koch, Stephan W; Moloney, Jerome V.

European Quantum Electronics Conference - Technical Digest. IEEE, 1994. p. 6-7.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hess, O, Koch, SW & Moloney, JV 1994, Spatiotemporal dynamics of broad-area semiconductor lasers. in European Quantum Electronics Conference - Technical Digest. IEEE, pp. 6-7, Proceedings of the 5th European Quantum Electronics Conference, Amsterdam, Neth, 8/28/94.
Hess O, Koch SW, Moloney JV. Spatiotemporal dynamics of broad-area semiconductor lasers. In European Quantum Electronics Conference - Technical Digest. IEEE. 1994. p. 6-7
Hess, Ortwin ; Koch, Stephan W ; Moloney, Jerome V. / Spatiotemporal dynamics of broad-area semiconductor lasers. European Quantum Electronics Conference - Technical Digest. IEEE, 1994. pp. 6-7
@inproceedings{879257d4d5db4b1d8d139f8480a082ac,
title = "Spatiotemporal dynamics of broad-area semiconductor lasers",
abstract = "We present a microscopic model for describing the spatiotemporal dynamics of semiconductor lasers. On the basis of the free-carrier Maxwell-Bloch equations in relaxation-time approximation, the dynamics of the polarization are explicitly considered. In structure, the model can be interpreted as an extension of spatially dependent two-level Maxwell-Bloch model systems to specifically adopt to the semiconductor gain medium with its continuum of states. The explicit consideration of the spatiotemporal dynamics of the polarization, together with the carrier density and the counterpropagating optical fields, has the advantage to naturally include in the theory and the numerical modeling (1) nonlinear gain-enhancement and saturation effects, (2) frequency dependence and spectral properties, and (3) nonlinear dispersion and absorption.",
author = "Ortwin Hess and Koch, {Stephan W} and Moloney, {Jerome V}",
year = "1994",
language = "English (US)",
pages = "6--7",
booktitle = "European Quantum Electronics Conference - Technical Digest",
publisher = "IEEE",

}

TY - GEN

T1 - Spatiotemporal dynamics of broad-area semiconductor lasers

AU - Hess, Ortwin

AU - Koch, Stephan W

AU - Moloney, Jerome V

PY - 1994

Y1 - 1994

N2 - We present a microscopic model for describing the spatiotemporal dynamics of semiconductor lasers. On the basis of the free-carrier Maxwell-Bloch equations in relaxation-time approximation, the dynamics of the polarization are explicitly considered. In structure, the model can be interpreted as an extension of spatially dependent two-level Maxwell-Bloch model systems to specifically adopt to the semiconductor gain medium with its continuum of states. The explicit consideration of the spatiotemporal dynamics of the polarization, together with the carrier density and the counterpropagating optical fields, has the advantage to naturally include in the theory and the numerical modeling (1) nonlinear gain-enhancement and saturation effects, (2) frequency dependence and spectral properties, and (3) nonlinear dispersion and absorption.

AB - We present a microscopic model for describing the spatiotemporal dynamics of semiconductor lasers. On the basis of the free-carrier Maxwell-Bloch equations in relaxation-time approximation, the dynamics of the polarization are explicitly considered. In structure, the model can be interpreted as an extension of spatially dependent two-level Maxwell-Bloch model systems to specifically adopt to the semiconductor gain medium with its continuum of states. The explicit consideration of the spatiotemporal dynamics of the polarization, together with the carrier density and the counterpropagating optical fields, has the advantage to naturally include in the theory and the numerical modeling (1) nonlinear gain-enhancement and saturation effects, (2) frequency dependence and spectral properties, and (3) nonlinear dispersion and absorption.

UR - http://www.scopus.com/inward/record.url?scp=0028584475&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028584475&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028584475

SP - 6

EP - 7

BT - European Quantum Electronics Conference - Technical Digest

PB - IEEE

ER -