Speciation during wet etching of III-V semiconductors

A. Hinckley, E. Foster, T. Corley, Anthony J Muscat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The concentration of volatile arsenic species above GaAs during etching with aqueous HF and HC1 was measured via mass spectrometry. The total arsenic detected above solutions with acid concentrations between 0.6 M and 28.9 M was consistently between 4 and 5 mg/m3. The mass fragments detected contained As-H and As-0 moieties. No volatile species containing gallium were detected. Inductively-coupled plasma mass spectrometry (ICP-MS) was performed on aqueous HF solutions and used with the vapor phase concentrations to close a mass balance on arsenic to within 1-2 nmol. Vapor phase species containing As-O bonds were produced by hydrolysis and increased with etching time. The hydrolysis of these species complicated the identification of specific products in the vapor phase.

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages163-170
Number of pages8
Volume80
Edition2
ISBN (Electronic)9781607685395
DOIs
StatePublished - Jan 1 2017
Event15th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2017 - 232nd ECS Meeting - National Harbor, United States
Duration: Oct 2 2017Oct 3 2017

Other

Other15th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2017 - 232nd ECS Meeting
CountryUnited States
CityNational Harbor
Period10/2/1710/3/17

ASJC Scopus subject areas

  • Engineering(all)

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    Hinckley, A., Foster, E., Corley, T., & Muscat, A. J. (2017). Speciation during wet etching of III-V semiconductors. In ECS Transactions (2 ed., Vol. 80, pp. 163-170). Electrochemical Society Inc.. https://doi.org/10.1149/08002.0163ecst