Speciation during wet etching of III-V semiconductors

A. Hinckley, E. Foster, T. Corley, Anthony J Muscat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The concentration of volatile arsenic species above GaAs during etching with aqueous HF and HC1 was measured via mass spectrometry. The total arsenic detected above solutions with acid concentrations between 0.6 M and 28.9 M was consistently between 4 and 5 mg/m3. The mass fragments detected contained As-H and As-0 moieties. No volatile species containing gallium were detected. Inductively-coupled plasma mass spectrometry (ICP-MS) was performed on aqueous HF solutions and used with the vapor phase concentrations to close a mass balance on arsenic to within 1-2 nmol. Vapor phase species containing As-O bonds were produced by hydrolysis and increased with etching time. The hydrolysis of these species complicated the identification of specific products in the vapor phase.

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages163-170
Number of pages8
Volume80
Edition2
ISBN (Electronic)9781607685395
DOIs
StatePublished - Jan 1 2017
Event15th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2017 - 232nd ECS Meeting - National Harbor, United States
Duration: Oct 2 2017Oct 3 2017

Other

Other15th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2017 - 232nd ECS Meeting
CountryUnited States
CityNational Harbor
Period10/2/1710/3/17

Fingerprint

Wet etching
Arsenic
Vapors
Etching
Hydrolysis
Inductively coupled plasma mass spectrometry
Gallium
Mass spectrometry
Acids
III-V semiconductors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hinckley, A., Foster, E., Corley, T., & Muscat, A. J. (2017). Speciation during wet etching of III-V semiconductors. In ECS Transactions (2 ed., Vol. 80, pp. 163-170). Electrochemical Society Inc.. https://doi.org/10.1149/08002.0163ecst

Speciation during wet etching of III-V semiconductors. / Hinckley, A.; Foster, E.; Corley, T.; Muscat, Anthony J.

ECS Transactions. Vol. 80 2. ed. Electrochemical Society Inc., 2017. p. 163-170.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hinckley, A, Foster, E, Corley, T & Muscat, AJ 2017, Speciation during wet etching of III-V semiconductors. in ECS Transactions. 2 edn, vol. 80, Electrochemical Society Inc., pp. 163-170, 15th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2017 - 232nd ECS Meeting, National Harbor, United States, 10/2/17. https://doi.org/10.1149/08002.0163ecst
Hinckley A, Foster E, Corley T, Muscat AJ. Speciation during wet etching of III-V semiconductors. In ECS Transactions. 2 ed. Vol. 80. Electrochemical Society Inc. 2017. p. 163-170 https://doi.org/10.1149/08002.0163ecst
Hinckley, A. ; Foster, E. ; Corley, T. ; Muscat, Anthony J. / Speciation during wet etching of III-V semiconductors. ECS Transactions. Vol. 80 2. ed. Electrochemical Society Inc., 2017. pp. 163-170
@inproceedings{edd8e94ae79a46c8b4fdba3667e474b3,
title = "Speciation during wet etching of III-V semiconductors",
abstract = "The concentration of volatile arsenic species above GaAs during etching with aqueous HF and HC1 was measured via mass spectrometry. The total arsenic detected above solutions with acid concentrations between 0.6 M and 28.9 M was consistently between 4 and 5 mg/m3. The mass fragments detected contained As-H and As-0 moieties. No volatile species containing gallium were detected. Inductively-coupled plasma mass spectrometry (ICP-MS) was performed on aqueous HF solutions and used with the vapor phase concentrations to close a mass balance on arsenic to within 1-2 nmol. Vapor phase species containing As-O bonds were produced by hydrolysis and increased with etching time. The hydrolysis of these species complicated the identification of specific products in the vapor phase.",
author = "A. Hinckley and E. Foster and T. Corley and Muscat, {Anthony J}",
year = "2017",
month = "1",
day = "1",
doi = "10.1149/08002.0163ecst",
language = "English (US)",
volume = "80",
pages = "163--170",
booktitle = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
edition = "2",

}

TY - GEN

T1 - Speciation during wet etching of III-V semiconductors

AU - Hinckley, A.

AU - Foster, E.

AU - Corley, T.

AU - Muscat, Anthony J

PY - 2017/1/1

Y1 - 2017/1/1

N2 - The concentration of volatile arsenic species above GaAs during etching with aqueous HF and HC1 was measured via mass spectrometry. The total arsenic detected above solutions with acid concentrations between 0.6 M and 28.9 M was consistently between 4 and 5 mg/m3. The mass fragments detected contained As-H and As-0 moieties. No volatile species containing gallium were detected. Inductively-coupled plasma mass spectrometry (ICP-MS) was performed on aqueous HF solutions and used with the vapor phase concentrations to close a mass balance on arsenic to within 1-2 nmol. Vapor phase species containing As-O bonds were produced by hydrolysis and increased with etching time. The hydrolysis of these species complicated the identification of specific products in the vapor phase.

AB - The concentration of volatile arsenic species above GaAs during etching with aqueous HF and HC1 was measured via mass spectrometry. The total arsenic detected above solutions with acid concentrations between 0.6 M and 28.9 M was consistently between 4 and 5 mg/m3. The mass fragments detected contained As-H and As-0 moieties. No volatile species containing gallium were detected. Inductively-coupled plasma mass spectrometry (ICP-MS) was performed on aqueous HF solutions and used with the vapor phase concentrations to close a mass balance on arsenic to within 1-2 nmol. Vapor phase species containing As-O bonds were produced by hydrolysis and increased with etching time. The hydrolysis of these species complicated the identification of specific products in the vapor phase.

UR - http://www.scopus.com/inward/record.url?scp=85050029602&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85050029602&partnerID=8YFLogxK

U2 - 10.1149/08002.0163ecst

DO - 10.1149/08002.0163ecst

M3 - Conference contribution

VL - 80

SP - 163

EP - 170

BT - ECS Transactions

PB - Electrochemical Society Inc.

ER -