Spectral hole burning and gain saturation in short-cavity semiconductor lasers

K. Henneberger, F. Herzel, Stephan W Koch, Rudolf Binder, A. E. Paul, D. Scott

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

A coupled set of equations for carrier distributions and stimulated emission in a semiconductor laser is presented, based on a nonequilibrium Greens-function formulation. Carrier momentum-dependent dephasing caused by carrier-carrier scattering and frequency-dependent optical gain are shown to govern the interplay between carrier relaxation and stimulated recombination. Ignoring the interband Coulomb interaction, the coupled system of equations for the carrier distribution functions and the optical gain is solved self-consistently for a single-mode short-cavity semiconductor laser under steady-state operation conditions. Numerical results show spectral and kinetic hole burning as well as nonlinear gain saturation.

Original languageEnglish (US)
Pages (from-to)1853-1859
Number of pages7
JournalPhysical Review A
Volume45
Issue number3
DOIs
StatePublished - 1992

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hole burning
semiconductor lasers
saturation
cavities
stimulated emission
Green's functions
distribution functions
momentum
formulations
kinetics
scattering
interactions

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Atomic and Molecular Physics, and Optics

Cite this

Spectral hole burning and gain saturation in short-cavity semiconductor lasers. / Henneberger, K.; Herzel, F.; Koch, Stephan W; Binder, Rudolf; Paul, A. E.; Scott, D.

In: Physical Review A, Vol. 45, No. 3, 1992, p. 1853-1859.

Research output: Contribution to journalArticle

Henneberger, K. ; Herzel, F. ; Koch, Stephan W ; Binder, Rudolf ; Paul, A. E. ; Scott, D. / Spectral hole burning and gain saturation in short-cavity semiconductor lasers. In: Physical Review A. 1992 ; Vol. 45, No. 3. pp. 1853-1859.
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