Spectral hole burning in active and passive semiconductors

K. Henneberger, H. Haug, W. Schafer, R. Binder, Stephan W. Koch

Research output: Contribution to conferencePaperpeer-review

Abstract

A many-body nonequilibrium Green's function description of spectral hole burning has been developed. The resulting equations have been solved for active and passive semiconductors. A numerical analysis has been carried out for the stimulated emission of a single-mode under stationary pumping. The results show the spectral hole in the electron distribution and the corresponding line shape of the stimulated emission as a function of pump intensity.

Original languageEnglish (US)
Number of pages1
StatePublished - Dec 1 1990
Event17th International Conference on Quantum Electronics - IQEC '90 - Anaheim, CA, USA
Duration: May 21 1990May 25 1990

Other

Other17th International Conference on Quantum Electronics - IQEC '90
CityAnaheim, CA, USA
Period5/21/905/25/90

ASJC Scopus subject areas

  • Engineering(all)

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