Abstract
A many-body nonequilibrium Green's function description of spectral hole burning has been developed. The resulting equations have been solved for active and passive semiconductors. A numerical analysis has been carried out for the stimulated emission of a single-mode under stationary pumping. The results show the spectral hole in the electron distribution and the corresponding line shape of the stimulated emission as a function of pump intensity.
Original language | English (US) |
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Title of host publication | XVII International Conference on Quantum Electronics. Digest of |
Publisher | Publ by IEEE |
Pages | 118 |
Number of pages | 1 |
State | Published - 1990 |
Externally published | Yes |
Event | 17th International Conference on Quantum Electronics - IQEC '90 - Anaheim, CA, USA Duration: May 21 1990 → May 25 1990 |
Other
Other | 17th International Conference on Quantum Electronics - IQEC '90 |
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City | Anaheim, CA, USA |
Period | 5/21/90 → 5/25/90 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Spectral hole burning in active and passive semiconductors. / Henneberger, K.; Haug, H.; Schafer, W.; Binder, Rudolf; Koch, Stephan W.
XVII International Conference on Quantum Electronics. Digest of. Publ by IEEE, 1990. p. 118.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Spectral hole burning in active and passive semiconductors
AU - Henneberger, K.
AU - Haug, H.
AU - Schafer, W.
AU - Binder, Rudolf
AU - Koch, Stephan W
PY - 1990
Y1 - 1990
N2 - A many-body nonequilibrium Green's function description of spectral hole burning has been developed. The resulting equations have been solved for active and passive semiconductors. A numerical analysis has been carried out for the stimulated emission of a single-mode under stationary pumping. The results show the spectral hole in the electron distribution and the corresponding line shape of the stimulated emission as a function of pump intensity.
AB - A many-body nonequilibrium Green's function description of spectral hole burning has been developed. The resulting equations have been solved for active and passive semiconductors. A numerical analysis has been carried out for the stimulated emission of a single-mode under stationary pumping. The results show the spectral hole in the electron distribution and the corresponding line shape of the stimulated emission as a function of pump intensity.
UR - http://www.scopus.com/inward/record.url?scp=0025535660&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025535660&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0025535660
SP - 118
BT - XVII International Conference on Quantum Electronics. Digest of
PB - Publ by IEEE
ER -