Spectral hole burning in the gain region of an inverted semiconductor

K. Meissner, B. Fluegel, H. Giessen, B. P. McGinnis, A. Paul, R. Binder, S. W. Koch, N. Peyghambarian, M. Grün, C. Klingshirn

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We report on the observation and numerical calculations of femtosecond gain dynamics in an optically excited, CdSe epitaxial sample at low temperature. Spectral hole burning is clearly observed around the pump as it is tuned through the gain region. The pump-probe experiments agree well with our theory that involves numerical evaluation of the semiconductor Bloch equations in the presence of carrier-carrier and carrierLO-phonon scattering.

Original languageEnglish (US)
Pages (from-to)15472-15475
Number of pages4
JournalPhysical Review B
Volume48
Issue number20
DOIs
StatePublished - Jan 1 1993

ASJC Scopus subject areas

  • Condensed Matter Physics

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