Spectral hole burning in the gain region of an inverted semiconductor

K. Meissner, B. Fluegel, H. Giessen, B. P. McGinnis, A. Paul, Rudolf Binder, Stephan W Koch, Nasser N Peyghambarian, M. Grün, C. Klingshirn

Research output: Contribution to journalArticle

20 Scopus citations


We report on the observation and numerical calculations of femtosecond gain dynamics in an optically excited, CdSe epitaxial sample at low temperature. Spectral hole burning is clearly observed around the pump as it is tuned through the gain region. The pump-probe experiments agree well with our theory that involves numerical evaluation of the semiconductor Bloch equations in the presence of carrier-carrier and carrierLO-phonon scattering.

Original languageEnglish (US)
Pages (from-to)15472-15475
Number of pages4
JournalPhysical Review B
Issue number20
Publication statusPublished - 1993


ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Meissner, K., Fluegel, B., Giessen, H., McGinnis, B. P., Paul, A., Binder, R., ... Klingshirn, C. (1993). Spectral hole burning in the gain region of an inverted semiconductor. Physical Review B, 48(20), 15472-15475. https://doi.org/10.1103/PhysRevB.48.15472