TY - JOUR
T1 - Spectroscopic, theoretical, and electrochemical studies of 1,2-dithiins
AU - Glass, Richard S.
AU - Pollard, John R.
AU - Schroeder, T. Benjamin
AU - Lichtenberger, Dennis L.
AU - Block, Eric
AU - DeOrazio, Russell
AU - Guo, Chuangxing
AU - Thiruvazhi, Mohan
PY - 1997/1/1
Y1 - 1997/1/1
N2 - The lowest oxidation potentials for 1,2-dithiins are in the range of 0.67-0.96 V in acetonitrile and 0.81-1.04 V in dichloromethane. These oxidation potentials are less anodic than expected based on the ionization potentials of 1,2-dithiin determined by photoelectron spectroscopy. Theoretical calculations suggest that the reason for this difference is a change in optimized geometry between 1,2-dithiin and its oxidized species.
AB - The lowest oxidation potentials for 1,2-dithiins are in the range of 0.67-0.96 V in acetonitrile and 0.81-1.04 V in dichloromethane. These oxidation potentials are less anodic than expected based on the ionization potentials of 1,2-dithiin determined by photoelectron spectroscopy. Theoretical calculations suggest that the reason for this difference is a change in optimized geometry between 1,2-dithiin and its oxidized species.
UR - http://www.scopus.com/inward/record.url?scp=0031491842&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031491842&partnerID=8YFLogxK
U2 - 10.1080/10426509708545587
DO - 10.1080/10426509708545587
M3 - Article
AN - SCOPUS:0031491842
VL - 120-121
SP - 439
EP - 440
JO - Phosphorus, Sulfur and Silicon and the Related Elements
JF - Phosphorus, Sulfur and Silicon and the Related Elements
SN - 1042-6507
ER -