Abstract
During the past four years, researchers made significant advances in fabricating magnetic tunnel junctions with reproducible magnetic and magnetotransport properties. Important developments include optimization of oxidation processes, discovery of new class of magnetic tunnel junctions, combination of spin dependent tunneling with the Coulomb blockade effect, and a better theoretical understanding of the I-V characteristics of magnetic tunnel junctions. These developments make them promising candidates for magnetic random access memories.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 223-229 |
| Number of pages | 7 |
| Journal | Current Opinion in Solid State and Materials Science |
| Volume | 4 |
| Issue number | 2 |
| State | Published - Apr 1999 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Materials Science(all)
Cite this
Spin dependent tunneling. / Levy, Peter M.; Zhang, Shufeng.
In: Current Opinion in Solid State and Materials Science, Vol. 4, No. 2, 04.1999, p. 223-229.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Spin dependent tunneling
AU - Levy, Peter M.
AU - Zhang, Shufeng
PY - 1999/4
Y1 - 1999/4
N2 - During the past four years, researchers made significant advances in fabricating magnetic tunnel junctions with reproducible magnetic and magnetotransport properties. Important developments include optimization of oxidation processes, discovery of new class of magnetic tunnel junctions, combination of spin dependent tunneling with the Coulomb blockade effect, and a better theoretical understanding of the I-V characteristics of magnetic tunnel junctions. These developments make them promising candidates for magnetic random access memories.
AB - During the past four years, researchers made significant advances in fabricating magnetic tunnel junctions with reproducible magnetic and magnetotransport properties. Important developments include optimization of oxidation processes, discovery of new class of magnetic tunnel junctions, combination of spin dependent tunneling with the Coulomb blockade effect, and a better theoretical understanding of the I-V characteristics of magnetic tunnel junctions. These developments make them promising candidates for magnetic random access memories.
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UR - http://www.scopus.com/inward/citedby.url?scp=0001485748&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0001485748
VL - 4
SP - 223
EP - 229
JO - Current Opinion in Solid State and Materials Science
JF - Current Opinion in Solid State and Materials Science
SN - 1359-0286
IS - 2
ER -