Spin dependent tunneling

Peter M. Levy; Shufeng Zhang

doi:10.1016/S1359-0286(99)00008-X

Spin dependent tunneling

Peter M. Levy, Shufeng Zhang

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

During the past four years, researchers made significant advances in fabricating magnetic tunnel junctions with reproducible magnetic and magnetotransport properties. Important developments include optimization of oxidation processes, discovery of new class of magnetic tunnel junctions, combination of spin dependent tunneling with the Coulomb blockade effect, and a better theoretical understanding of the I-V characteristics of magnetic tunnel junctions. These developments make them promising candidates for magnetic random access memories.

Original language	English (US)
Pages (from-to)	223-229
Number of pages	7
Journal	Current Opinion in Solid State and Materials Science
Volume	4
Issue number	2
DOIs	https://doi.org/10.1016/S1359-0286(99)00008-X
State	Published - Apr 1999
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)

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10.1016/S1359-0286(99)00008-X

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title = "Spin dependent tunneling",

abstract = "During the past four years, researchers made significant advances in fabricating magnetic tunnel junctions with reproducible magnetic and magnetotransport properties. Important developments include optimization of oxidation processes, discovery of new class of magnetic tunnel junctions, combination of spin dependent tunneling with the Coulomb blockade effect, and a better theoretical understanding of the I-V characteristics of magnetic tunnel junctions. These developments make them promising candidates for magnetic random access memories.",

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AB - During the past four years, researchers made significant advances in fabricating magnetic tunnel junctions with reproducible magnetic and magnetotransport properties. Important developments include optimization of oxidation processes, discovery of new class of magnetic tunnel junctions, combination of spin dependent tunneling with the Coulomb blockade effect, and a better theoretical understanding of the I-V characteristics of magnetic tunnel junctions. These developments make them promising candidates for magnetic random access memories.

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