@article{0a8f78977f394a06aa94e204614fd208,
title = "Spin dependent tunneling",
abstract = "During the past four years, researchers made significant advances in fabricating magnetic tunnel junctions with reproducible magnetic and magnetotransport properties. Important developments include optimization of oxidation processes, discovery of new class of magnetic tunnel junctions, combination of spin dependent tunneling with the Coulomb blockade effect, and a better theoretical understanding of the I-V characteristics of magnetic tunnel junctions. These developments make them promising candidates for magnetic random access memories.",
author = "Levy, {Peter M.} and Shufeng Zhang",
note = "Funding Information: We would like to express our thanks to numerous colleagues who have given us comments and suggestions on the noteworthy developments during the past year. In particular we thank Gerrit Bauer, Alex Bratkovsky, Bill Butler, Jim Daughton, Bernard Dieny, Albert Fert, Paulo Freitas, Selman Hershfield, Junichiro Inoue, Sadamichi Maekawa, Ingrid Mertig, Terunobu Miyazaki, Stuart Parkin, Ivan Schuller, Mark Stiles, Koki Takanashi, Evgueni Tsymbal, and Anatoly Vedyayev. Our work on SDT has been supported by the Office of Naval Research (N00014-96-1-0203), together with the Defense Advanced Research Projects Agency (N00014-96-1-1207), and (MDA972-96-C-0014), the National Science Foundation (INT-9602192), and NATO (CRG 960340). Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",
year = "1999",
month = apr,
doi = "10.1016/S1359-0286(99)00008-X",
language = "English (US)",
volume = "4",
pages = "223--229",
journal = "Current Opinion in Solid State and Materials Science",
issn = "1359-0286",
publisher = "Elsevier Limited",
number = "2",
}