Spin dependent tunneling

Peter M. Levy, Shufeng Zhang

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

During the past four years, researchers made significant advances in fabricating magnetic tunnel junctions with reproducible magnetic and magnetotransport properties. Important developments include optimization of oxidation processes, discovery of new class of magnetic tunnel junctions, combination of spin dependent tunneling with the Coulomb blockade effect, and a better theoretical understanding of the I-V characteristics of magnetic tunnel junctions. These developments make them promising candidates for magnetic random access memories.

Original languageEnglish (US)
Pages (from-to)223-229
Number of pages7
JournalCurrent Opinion in Solid State and Materials Science
Volume4
Issue number2
DOIs
StatePublished - Apr 1999
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)

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