Spin dependent tunneling

Peter M. Levy, Shufeng Zhang

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

During the past four years, researchers made significant advances in fabricating magnetic tunnel junctions with reproducible magnetic and magnetotransport properties. Important developments include optimization of oxidation processes, discovery of new class of magnetic tunnel junctions, combination of spin dependent tunneling with the Coulomb blockade effect, and a better theoretical understanding of the I-V characteristics of magnetic tunnel junctions. These developments make them promising candidates for magnetic random access memories.

Original languageEnglish (US)
Pages (from-to)223-229
Number of pages7
JournalCurrent Opinion in Solid State and Materials Science
Volume4
Issue number2
StatePublished - Apr 1999
Externally publishedYes

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Tunnel junctions
Coulomb blockade
Galvanomagnetic effects
Electron tunneling
Data storage equipment
Oxidation

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Spin dependent tunneling. / Levy, Peter M.; Zhang, Shufeng.

In: Current Opinion in Solid State and Materials Science, Vol. 4, No. 2, 04.1999, p. 223-229.

Research output: Contribution to journalArticle

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