Abstract
During the past four years, researchers made significant advances in fabricating magnetic tunnel junctions with reproducible magnetic and magnetotransport properties. Important developments include optimization of oxidation processes, discovery of new class of magnetic tunnel junctions, combination of spin dependent tunneling with the Coulomb blockade effect, and a better theoretical understanding of the I-V characteristics of magnetic tunnel junctions. These developments make them promising candidates for magnetic random access memories.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 223-229 |
| Number of pages | 7 |
| Journal | Current Opinion in Solid State and Materials Science |
| Volume | 4 |
| Issue number | 2 |
| DOIs | |
| State | Published - Apr 1999 |
| Externally published | Yes |
ASJC Scopus subject areas
- Materials Science(all)
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Cite this
Levy, P. M., & Zhang, S. (1999). Spin dependent tunneling. Current Opinion in Solid State and Materials Science, 4(2), 223-229. https://doi.org/10.1016/S1359-0286(99)00008-X