Spin Hall effect in a magnetic field

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

When a spin-polarized current is injected into a non-magnetic semiconductor, a transverse electric field known as Hall voltage is generated. By using a macroscopic diffusion equation, we derive the Hall voltage in the presence of both spin current and magnetic field. Novel features such as oscillating Hall signals as a function of the magnetic field and geometrical dependence of Hall signals are predicted.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
Pages191-198
Number of pages8
Volume690
StatePublished - 2002
Externally publishedYes
EventSpintronics - Boston, MA, United States
Duration: Nov 26 2001Nov 29 2001

Other

OtherSpintronics
CountryUnited States
CityBoston, MA
Period11/26/0111/29/01

Fingerprint

Spin Hall effect
Magnetic fields
Electric potential
Electric fields
Semiconductor materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Zhang, S. (2002). Spin Hall effect in a magnetic field. In Materials Research Society Symposium - Proceedings (Vol. 690, pp. 191-198)

Spin Hall effect in a magnetic field. / Zhang, Shufeng.

Materials Research Society Symposium - Proceedings. Vol. 690 2002. p. 191-198.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhang, S 2002, Spin Hall effect in a magnetic field. in Materials Research Society Symposium - Proceedings. vol. 690, pp. 191-198, Spintronics, Boston, MA, United States, 11/26/01.
Zhang S. Spin Hall effect in a magnetic field. In Materials Research Society Symposium - Proceedings. Vol. 690. 2002. p. 191-198
Zhang, Shufeng. / Spin Hall effect in a magnetic field. Materials Research Society Symposium - Proceedings. Vol. 690 2002. pp. 191-198
@inproceedings{6ff471725eb34b219342e9f0ae12fd75,
title = "Spin Hall effect in a magnetic field",
abstract = "When a spin-polarized current is injected into a non-magnetic semiconductor, a transverse electric field known as Hall voltage is generated. By using a macroscopic diffusion equation, we derive the Hall voltage in the presence of both spin current and magnetic field. Novel features such as oscillating Hall signals as a function of the magnetic field and geometrical dependence of Hall signals are predicted.",
author = "Shufeng Zhang",
year = "2002",
language = "English (US)",
volume = "690",
pages = "191--198",
booktitle = "Materials Research Society Symposium - Proceedings",

}

TY - GEN

T1 - Spin Hall effect in a magnetic field

AU - Zhang, Shufeng

PY - 2002

Y1 - 2002

N2 - When a spin-polarized current is injected into a non-magnetic semiconductor, a transverse electric field known as Hall voltage is generated. By using a macroscopic diffusion equation, we derive the Hall voltage in the presence of both spin current and magnetic field. Novel features such as oscillating Hall signals as a function of the magnetic field and geometrical dependence of Hall signals are predicted.

AB - When a spin-polarized current is injected into a non-magnetic semiconductor, a transverse electric field known as Hall voltage is generated. By using a macroscopic diffusion equation, we derive the Hall voltage in the presence of both spin current and magnetic field. Novel features such as oscillating Hall signals as a function of the magnetic field and geometrical dependence of Hall signals are predicted.

UR - http://www.scopus.com/inward/record.url?scp=0036350551&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036350551&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0036350551

VL - 690

SP - 191

EP - 198

BT - Materials Research Society Symposium - Proceedings

ER -