Spin-Layer and Spin-Valley Locking in CVD-Grown AA′- and AB-Stacked Tungsten-Disulfide Bilayers

Lorenz Maximilian Schneider, Jan Kuhnert, Simon Schmitt, Wolfram Heimbrodt, Ulrich Huttner, Lars Meckbach, Tineke Stroucken, Stephan W Koch, Shichen Fu, Xiaotian Wang, Kyungnam Kang, Eui Hyeok Yang, Arash Rahimi-Iman

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Valley-selective optical selection rules and a spin-valley locking in transition-metal dichalcogenide (TMDC) monolayers are at the heart of "valleytronic physics", which exploits the valley degree of freedom and has been a major research topic in recent years. In contrast, valleytronic properties of TMDC bilayers have not been in the focus so much by now. Here, we report on the valleytronic properties and optical characterization of bilayers of WS2 as a representative TMDC material. In particular, we study the influence of the relative layer alignment in TMDC homobilayer samples on their polarization-dependent optical properties. Therefore, chemical vapor deposition-grown WS2 bilayer samples have been prepared that favor either the inversion symmetric AA′ stacking or AB stacking without inversion symmetry during synthesis. Subsequently, a detailed analysis of reflection contrast and photoluminescence spectra under different polarization conditions has been performed. We observe circular and linear dichroisms of the photoluminescence that is more pronounced for the AB stacking configuration. Our experimental findings are supported by theoretical calculations showing that the observed dichroism can be linked to optical selection rules that maintain the spin-valley locking in the AB-stacked WS2 bilayer, whereas a spin-layer locking presents the inversion symmetric AA′ bilayer instead. Furthermore, our theoretical calculations predict a small relative shift of the excitonic resonances in both stacking configurations, which is also experimentally observed.

Original languageEnglish (US)
Pages (from-to)21813-21821
Number of pages9
JournalJournal of Physical Chemistry C
Volume123
Issue number35
DOIs
StatePublished - Jul 29 2019

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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    Schneider, L. M., Kuhnert, J., Schmitt, S., Heimbrodt, W., Huttner, U., Meckbach, L., Stroucken, T., Koch, S. W., Fu, S., Wang, X., Kang, K., Yang, E. H., & Rahimi-Iman, A. (2019). Spin-Layer and Spin-Valley Locking in CVD-Grown AA′- and AB-Stacked Tungsten-Disulfide Bilayers. Journal of Physical Chemistry C, 123(35), 21813-21821. https://doi.org/10.1021/acs.jpcc.9b07213