Spin orbit torque effect in Pt/FeMn bilayers

Y. Yang, X. Zhang, Y. Xu, Shufeng Zhang, R. Li, K. Yao, Y. Wu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recently, there is an increasing interest in exploiting antiferromagnet (AFM) as an active element in spintronic devices arising from its advantages of negligible shape anisotropy and good thermal stability as compared to its ferromagnet (FM) counterpart. To reap these benefits of AFM, however, one must find a viable way to obtain sizable output signal from AFM and an efficient mechanism for reorienting its spin directions, both of which are known to be more difficult than that of FM. On the other hand, spin orbit torque in FM/heavy metal (HM) bilayers [1] has recently been reported to be a promising alternative to spin transfer torque for switching magnetization directly by an in-plane current. Although both theoretical and experimental investigations suggested that it is possible to alter the spin configuration of antiferromagnet by STT [2], it remains an open question as to whether the same can be achieved via SOT. In this work, we present the experimental investigations of SOT effect in Pt/FeMn bilayers. The Hall bar samples were fabricated using standard lift off and sputtering techniques. To quantify the SOT effect, two sets of planar Hall effect (PHE) measurements were performed: 1) at different bias currents (5-30 mA) with zero transverse bias field, 2) at different bias field (60-260 Oe) with 3 mA bias current.

Original languageEnglish (US)
Title of host publication2015 IEEE International Magnetics Conference, INTERMAG 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479973224
DOIs
StatePublished - Jul 14 2015
Event2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
Duration: May 11 2015May 15 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
CountryChina
CityBeijing
Period5/11/155/15/15

Fingerprint

Bias currents
Orbits
Torque
Magnetoelectronics
Hall effect
Heavy Metals
Heavy metals
Sputtering
Magnetization
Anisotropy
Thermodynamic stability
Direction compound

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Yang, Y., Zhang, X., Xu, Y., Zhang, S., Li, R., Yao, K., & Wu, Y. (2015). Spin orbit torque effect in Pt/FeMn bilayers. In 2015 IEEE International Magnetics Conference, INTERMAG 2015 [7156650] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2015.7156650

Spin orbit torque effect in Pt/FeMn bilayers. / Yang, Y.; Zhang, X.; Xu, Y.; Zhang, Shufeng; Li, R.; Yao, K.; Wu, Y.

2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7156650.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yang, Y, Zhang, X, Xu, Y, Zhang, S, Li, R, Yao, K & Wu, Y 2015, Spin orbit torque effect in Pt/FeMn bilayers. in 2015 IEEE International Magnetics Conference, INTERMAG 2015., 7156650, Institute of Electrical and Electronics Engineers Inc., 2015 IEEE International Magnetics Conference, INTERMAG 2015, Beijing, China, 5/11/15. https://doi.org/10.1109/INTMAG.2015.7156650
Yang Y, Zhang X, Xu Y, Zhang S, Li R, Yao K et al. Spin orbit torque effect in Pt/FeMn bilayers. In 2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7156650 https://doi.org/10.1109/INTMAG.2015.7156650
Yang, Y. ; Zhang, X. ; Xu, Y. ; Zhang, Shufeng ; Li, R. ; Yao, K. ; Wu, Y. / Spin orbit torque effect in Pt/FeMn bilayers. 2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015.
@inproceedings{fd420c2cfe294a55b22fa5ba2af07967,
title = "Spin orbit torque effect in Pt/FeMn bilayers",
abstract = "Recently, there is an increasing interest in exploiting antiferromagnet (AFM) as an active element in spintronic devices arising from its advantages of negligible shape anisotropy and good thermal stability as compared to its ferromagnet (FM) counterpart. To reap these benefits of AFM, however, one must find a viable way to obtain sizable output signal from AFM and an efficient mechanism for reorienting its spin directions, both of which are known to be more difficult than that of FM. On the other hand, spin orbit torque in FM/heavy metal (HM) bilayers [1] has recently been reported to be a promising alternative to spin transfer torque for switching magnetization directly by an in-plane current. Although both theoretical and experimental investigations suggested that it is possible to alter the spin configuration of antiferromagnet by STT [2], it remains an open question as to whether the same can be achieved via SOT. In this work, we present the experimental investigations of SOT effect in Pt/FeMn bilayers. The Hall bar samples were fabricated using standard lift off and sputtering techniques. To quantify the SOT effect, two sets of planar Hall effect (PHE) measurements were performed: 1) at different bias currents (5-30 mA) with zero transverse bias field, 2) at different bias field (60-260 Oe) with 3 mA bias current.",
author = "Y. Yang and X. Zhang and Y. Xu and Shufeng Zhang and R. Li and K. Yao and Y. Wu",
year = "2015",
month = "7",
day = "14",
doi = "10.1109/INTMAG.2015.7156650",
language = "English (US)",
isbn = "9781479973224",
booktitle = "2015 IEEE International Magnetics Conference, INTERMAG 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Spin orbit torque effect in Pt/FeMn bilayers

AU - Yang, Y.

AU - Zhang, X.

AU - Xu, Y.

AU - Zhang, Shufeng

AU - Li, R.

AU - Yao, K.

AU - Wu, Y.

PY - 2015/7/14

Y1 - 2015/7/14

N2 - Recently, there is an increasing interest in exploiting antiferromagnet (AFM) as an active element in spintronic devices arising from its advantages of negligible shape anisotropy and good thermal stability as compared to its ferromagnet (FM) counterpart. To reap these benefits of AFM, however, one must find a viable way to obtain sizable output signal from AFM and an efficient mechanism for reorienting its spin directions, both of which are known to be more difficult than that of FM. On the other hand, spin orbit torque in FM/heavy metal (HM) bilayers [1] has recently been reported to be a promising alternative to spin transfer torque for switching magnetization directly by an in-plane current. Although both theoretical and experimental investigations suggested that it is possible to alter the spin configuration of antiferromagnet by STT [2], it remains an open question as to whether the same can be achieved via SOT. In this work, we present the experimental investigations of SOT effect in Pt/FeMn bilayers. The Hall bar samples were fabricated using standard lift off and sputtering techniques. To quantify the SOT effect, two sets of planar Hall effect (PHE) measurements were performed: 1) at different bias currents (5-30 mA) with zero transverse bias field, 2) at different bias field (60-260 Oe) with 3 mA bias current.

AB - Recently, there is an increasing interest in exploiting antiferromagnet (AFM) as an active element in spintronic devices arising from its advantages of negligible shape anisotropy and good thermal stability as compared to its ferromagnet (FM) counterpart. To reap these benefits of AFM, however, one must find a viable way to obtain sizable output signal from AFM and an efficient mechanism for reorienting its spin directions, both of which are known to be more difficult than that of FM. On the other hand, spin orbit torque in FM/heavy metal (HM) bilayers [1] has recently been reported to be a promising alternative to spin transfer torque for switching magnetization directly by an in-plane current. Although both theoretical and experimental investigations suggested that it is possible to alter the spin configuration of antiferromagnet by STT [2], it remains an open question as to whether the same can be achieved via SOT. In this work, we present the experimental investigations of SOT effect in Pt/FeMn bilayers. The Hall bar samples were fabricated using standard lift off and sputtering techniques. To quantify the SOT effect, two sets of planar Hall effect (PHE) measurements were performed: 1) at different bias currents (5-30 mA) with zero transverse bias field, 2) at different bias field (60-260 Oe) with 3 mA bias current.

UR - http://www.scopus.com/inward/record.url?scp=84942455995&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84942455995&partnerID=8YFLogxK

U2 - 10.1109/INTMAG.2015.7156650

DO - 10.1109/INTMAG.2015.7156650

M3 - Conference contribution

AN - SCOPUS:84942455995

SN - 9781479973224

BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -