Spin-polarized transport and dynamics in magnetic tunneling structures

R. Cao, T. Moriyama, W. G. Wang, X. Fan, J. Kolodzey, S. H. Chen, C. R. Chang, Y. Tserkovnyak, B. K. Nikolic, J. Q. Xiao

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

In the first part of this paper, we report a systematic study on the structural evolution under rapid thermal annealing and the corresponding transport properties in magnetic tunnel junctions (MTJs) with a crystalline MgO barrier. The results clearly indicate that high tunneling magnetic resistance can be achieved by annealing MTJs at avery short time, and it is directly related to the formation of (001) crystalline structures. In the second part, we report the spin dynamics in tunneling structure through direct electrical detection. A surprisingly large voltage generation in F/I/N and F/I/Fjunctions was observed, which is contradictory to the prediction from the standard spin-pumping theory. We proposed a theoretical formalism to study spin-pumping effects in ferromagnetic multilayer structures. The formalism can yield a remarkably cleanphysical picture of the spin and charge pumping in tunneling structures. The calculated values are consistent with experimental results.

Original languageEnglish (US)
Article number5257175
Pages (from-to)3434-3440
Number of pages7
JournalIEEE Transactions on Magnetics
Volume45
Issue number10
DOIs
StatePublished - Oct 1 2009
Externally publishedYes

Keywords

  • Magnetic tunneling junction (MTJ)
  • Spin dynamics
  • Transport

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Cao, R., Moriyama, T., Wang, W. G., Fan, X., Kolodzey, J., Chen, S. H., Chang, C. R., Tserkovnyak, Y., Nikolic, B. K., & Xiao, J. Q. (2009). Spin-polarized transport and dynamics in magnetic tunneling structures. IEEE Transactions on Magnetics, 45(10), 3434-3440. [5257175]. https://doi.org/10.1109/TMAG.2009.2024126