Spin-polarized transport in hybrid (Zn,Cr)Te/Al 2O 3/Co magnetic tunnel junctions

W. G. Wang, C. Ni, T. Moriyama, J. Wan, E. Nowak, John Q. Xiao

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

Tunnel magnetoresistance (TMR) of 21% is observed at low temperature in hybrid magnetic tunnel junctions (MTJs) composed of a magnetic semiconductor (Zn,Cr)Te and Co electrodes separated by an alumina barrier. The TMR is observed up to 250 K, which is a considerable improvement over previous work on MTJs with semiconductor electrodes. The temperature and bias dependence of the TMR are consistent with a transport model involving spin-polarized tunneling and spin-independent hopping through impurity states.

Original languageEnglish (US)
Article number202501
JournalApplied Physics Letters
Volume88
Issue number20
DOIs
StatePublished - May 15 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Spin-polarized transport in hybrid (Zn,Cr)Te/Al <sub>2</sub>O <sub>3</sub>/Co magnetic tunnel junctions'. Together they form a unique fingerprint.

  • Cite this