Spin-polarized transport in hybrid (Zn,Cr)Te/Al 2O 3/Co magnetic tunnel junctions

Weigang Wang, C. Ni, T. Moriyama, J. Wan, E. Nowak, John Q. Xiao

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Tunnel magnetoresistance (TMR) of 21% is observed at low temperature in hybrid magnetic tunnel junctions (MTJs) composed of a magnetic semiconductor (Zn,Cr)Te and Co electrodes separated by an alumina barrier. The TMR is observed up to 250 K, which is a considerable improvement over previous work on MTJs with semiconductor electrodes. The temperature and bias dependence of the TMR are consistent with a transport model involving spin-polarized tunneling and spin-independent hopping through impurity states.

Original languageEnglish (US)
Article number202501
JournalApplied Physics Letters
Volume88
Issue number20
DOIs
StatePublished - May 15 2006
Externally publishedYes

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tunnel junctions
tunnels
electrodes
aluminum oxides
impurities
temperature dependence

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Spin-polarized transport in hybrid (Zn,Cr)Te/Al 2O 3/Co magnetic tunnel junctions. / Wang, Weigang; Ni, C.; Moriyama, T.; Wan, J.; Nowak, E.; Xiao, John Q.

In: Applied Physics Letters, Vol. 88, No. 20, 202501, 15.05.2006.

Research output: Contribution to journalArticle

Wang, Weigang ; Ni, C. ; Moriyama, T. ; Wan, J. ; Nowak, E. ; Xiao, John Q. / Spin-polarized transport in hybrid (Zn,Cr)Te/Al 2O 3/Co magnetic tunnel junctions. In: Applied Physics Letters. 2006 ; Vol. 88, No. 20.
@article{de8f2013473e4408a13039f8ab9e26f4,
title = "Spin-polarized transport in hybrid (Zn,Cr)Te/Al 2O 3/Co magnetic tunnel junctions",
abstract = "Tunnel magnetoresistance (TMR) of 21{\%} is observed at low temperature in hybrid magnetic tunnel junctions (MTJs) composed of a magnetic semiconductor (Zn,Cr)Te and Co electrodes separated by an alumina barrier. The TMR is observed up to 250 K, which is a considerable improvement over previous work on MTJs with semiconductor electrodes. The temperature and bias dependence of the TMR are consistent with a transport model involving spin-polarized tunneling and spin-independent hopping through impurity states.",
author = "Weigang Wang and C. Ni and T. Moriyama and J. Wan and E. Nowak and Xiao, {John Q.}",
year = "2006",
month = "5",
day = "15",
doi = "10.1063/1.2205177",
language = "English (US)",
volume = "88",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

TY - JOUR

T1 - Spin-polarized transport in hybrid (Zn,Cr)Te/Al 2O 3/Co magnetic tunnel junctions

AU - Wang, Weigang

AU - Ni, C.

AU - Moriyama, T.

AU - Wan, J.

AU - Nowak, E.

AU - Xiao, John Q.

PY - 2006/5/15

Y1 - 2006/5/15

N2 - Tunnel magnetoresistance (TMR) of 21% is observed at low temperature in hybrid magnetic tunnel junctions (MTJs) composed of a magnetic semiconductor (Zn,Cr)Te and Co electrodes separated by an alumina barrier. The TMR is observed up to 250 K, which is a considerable improvement over previous work on MTJs with semiconductor electrodes. The temperature and bias dependence of the TMR are consistent with a transport model involving spin-polarized tunneling and spin-independent hopping through impurity states.

AB - Tunnel magnetoresistance (TMR) of 21% is observed at low temperature in hybrid magnetic tunnel junctions (MTJs) composed of a magnetic semiconductor (Zn,Cr)Te and Co electrodes separated by an alumina barrier. The TMR is observed up to 250 K, which is a considerable improvement over previous work on MTJs with semiconductor electrodes. The temperature and bias dependence of the TMR are consistent with a transport model involving spin-polarized tunneling and spin-independent hopping through impurity states.

UR - http://www.scopus.com/inward/record.url?scp=33646877536&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646877536&partnerID=8YFLogxK

U2 - 10.1063/1.2205177

DO - 10.1063/1.2205177

M3 - Article

AN - SCOPUS:33646877536

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 202501

ER -